SiO2/Si(100) interface characterization using infrared spectroscopy: Estimation of substoichiometry and strain

Thin Solid Films

Volumn 457, Issue 2, 2004, Pages 402-405

  Roy Chowdhuri, A ^a   Jin, Dong Un ^a   Takoudis, C G ^a  

^a University of Illinois at Chicago   (United States)

Author keywords

Infrared spectroscopy; Silicon silicon oxide interface; Stess; Suboxide

Indexed keywords

ELLIPSOMETRY; FOURIER TRANSFORM INFRARED SPECTROSCOPY; INFRARED SPECTROSCOPY; LIGHT PROPAGATION; PHONONS; STOICHIOMETRY; STRAIN; THERMAL STRESS; ULTRATHIN FILMS;

LONGITUDINAL OPTICAL (LO) PHONONS; OPTICAL MODEL; TRANVERSE OPTICAL (TO) PHONONS;

SILICON COMPOUNDS;

EID: 2342501839     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2003.11.293     Document Type: Article

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