Zirconium-assisted reaction in low temperature atomic layer deposition using Bis(ethyl-methyl-amino)silane and water

Applied Surface Science

Volumn 257, Issue 23, 2011, Pages 10311-10313

  Won, Seok Jun ^a,b   Kim, Joon Rae ^a   Suh, Sungin ^a   Choi, Yu Jin ^a   Kim, Hyeong Joon ^a  

^a Seoul National University   (South Korea)

^b SAMSUNG Electronics   (South Korea)

Author keywords

Atomic layer deposition; Hydroxyl; Silicate; Transition metal

Indexed keywords

ATOMS; SILICATES; TEMPERATURE; TRANSITION METAL OXIDES; TRANSITION METALS; ZIRCONIUM; ZIRCONIUM COMPOUNDS;

HYDROXYL; HYDROXYL SPECIES; LOW TEMPERATURES; REACTANT GAS; TEMPERATURE RANGE; VACANT SITES;

ATOMIC LAYER DEPOSITION;

EID: 80051783651     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2011.06.052     Document Type: Letter

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