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Volumn 519, Issue 1, 2010, Pages 270-275

Atomic layer deposition of SiO2 from Tris(dimethylamino)silane and ozone by using temperature-controlled water vapor treatment

Author keywords

Adsorption; Atomic layer deposition; Infrared absorption spectroscopy; Ozone; Silicon dioxide; Water vapor

Indexed keywords

ATOMIC LAYER; MULTIPLE INTERNAL REFLECTION GEOMETRIES; OZONE OXIDATION; ROOM TEMPERATURE; SI SURFACES; SI(100) SURFACE; SILICON DIOXIDE; SUBSTRATE TEMPERATURE;

EID: 77957697519     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2010.07.107     Document Type: Article
Times cited : (37)

References (16)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.