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Volumn 519, Issue 1, 2010, Pages 270-275
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Atomic layer deposition of SiO2 from Tris(dimethylamino)silane and ozone by using temperature-controlled water vapor treatment
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Author keywords
Adsorption; Atomic layer deposition; Infrared absorption spectroscopy; Ozone; Silicon dioxide; Water vapor
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Indexed keywords
ATOMIC LAYER;
MULTIPLE INTERNAL REFLECTION GEOMETRIES;
OZONE OXIDATION;
ROOM TEMPERATURE;
SI SURFACES;
SI(100) SURFACE;
SILICON DIOXIDE;
SUBSTRATE TEMPERATURE;
ATOMIC LAYER DEPOSITION;
ATOMIC SPECTROSCOPY;
ATOMS;
DEWATERING;
GAS ADSORPTION;
INFRARED ABSORPTION;
OXIDATION;
OZONE;
OZONE LAYER;
OZONIZATION;
SILICA;
SILICON;
SILICON OXIDES;
VAPOR DEPOSITION;
WATER ABSORPTION;
WATER TREATMENT;
WATER VAPOR;
ABSORPTION SPECTROSCOPY;
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EID: 77957697519
PISSN: 00406090
EISSN: None
Source Type: Journal
DOI: 10.1016/j.tsf.2010.07.107 Document Type: Article |
Times cited : (37)
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References (16)
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