Suppression of substrate oxidation during ozone based atomic layer deposition of Al2 O3: Effect of ozone flow rate

Applied Physics Letters

Volumn 97, Issue 16, 2010, Pages

  Kwon, Jinhee ^a   Dai, Min ^a   Halls, Mathew D ^b   Chabal, Yves J ^a  

^a The University of Texas at Dallas   (United States)

^b Materials Design Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

[AL-O-AL]; FIRST-PRINCIPLES CALCULATION; LOW DOSE; METHOXY; OXIDE GROWTH; OZONE FLOW; REACTION SITES; SUBSTRATE OXIDATION; SURFACE NUCLEATION; TRIMETHYLALUMINUM;

ATOMIC LAYER DEPOSITION; OXIDATION; OZONE; OZONE LAYER; SILICON COMPOUNDS; SILICON OXIDES;

ALUMINUM;

EID: 77958504776     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3500821     Document Type: Article

References (27)

1. Y. Widjaja and C. B. Musgrave, Appl. Phys. Lett. 0003-6951 80, 3304 (2002). 10.1063/1.1473237
2. A. Heyman and C. B. Musgrave, J. Phys. Chem. B 1089-5647 108, 5718 (2004). 10.1021/jp049762x
3. T. Matsuwaki, T. Nakajima, and K. Yamashita, J. Phys. IV France 11, Pr3-63 (2001). 10.1051/jp4:2001308
4. M. D. Halls and K. Raghavachari, J. Chem. Phys. 0021-9606 118, 10221 (2003). 10.1063/1.1571513
5. M. D. Halls and K. Raghavachari, J. Phys. Chem. B 1089-5647 108, 4058 (2004). 10.1021/jp0378079
6. D. -G. Park, H. -J. Cho, K. -Y. Lim, C. Lim, I. -S. Yeo, J. -S. Roh, and J. W. Park, J. Appl. Phys. 0021-8979 89, 6275 (2001). 10.1063/1.1368869
7. L. G. Gosset, J. F. Damlencourt, O. Renault, D. Rouchon, P. Holliger, A. Ermolieff, I. Trimaille, J. J. Ganem, F. Martin, and M. N. Śḿria, J. Non-Cryst. Solids 0022-3093 303, 17 (2002). 10.1016/S0022-3093(02)00958-4
8. C. Dallera, F. Fracassi, L. Braicovich, G. Scarel, C. Wiemer, M. Fanciulli, G. Pavia, and B. C. C. Cowie, Appl. Phys. Lett. 0003-6951 89, 183521 (2006). 10.1063/1.2374843
9. D. N. Goldstein, J. A. McCormick, and S. M. George, J. Phys. Chem. C 1932-7447 112, 19530 (2008). 10.1021/jp804296a
10. M. Rose, J. Niinisto, I. Endler, J. W. Bartha, P. Kucher, and M. Ritala, ACS Applied Materials & Interfaces 2, 347 (2010). 10.1021/am900807a
11. V. R. Rai, V. Vandalon, and S. Agarwal, Langmuir 0743-7463 26, 13732 (2010). 10.1021/la101485a
12. S. M. George, A. W. Ott, and J. W. Klaus, J. Phys. Chem. 0022-3654 100, 13121 (1996). 10.1021/jp9536763
13. A. W. Ott, J. W. Klaus, J. M. Johnson, and S. M. George, Thin Solid Films 0040-6090 292, 135 (1997). 10.1016/S0040-6090(96)08934-1
14. R. L. Puurunen, J. Appl. Phys. 0021-8979 97, 121301 (2005). 10.1063/1.1940727
15. M. T. Ho, Y. Wang, R. T. Brewer, L. S. Wielunski, Y. J. Chabal, N. Moumen, and M. Boleslawski, Appl. Phys. Lett. 0003-6951 87, 133103 (2005). 10.1063/1.2058226
16. S. D. Elliott, G. Scarel, C. Wiemer, M. Fanciulli, and G. Pavia, Chem. Mater. 0897-4756 18, 3764 (2006). 10.1021/cm0608903
17. J. B. Kim, D. R. Kwon, K. Chakrabarti, C. Lee, K. Y. Oh, and J. H. Lee, J. Appl. Phys. 0021-8979 92, 6739 (2002). 10.1063/1.1515951
18. J. Kwon, M. Dai, M. D. Halls, and Y. J. Chabal, Chem. Mater. 0897-4756 20, 3248 (2008). 10.1021/cm703667h
19. R. L. Puurunen, Chem. Vap. Deposition 0948-1907 9, 327 (2003). 10.1002/cvde.200306266
20. S. D. Elliott and J. C. Greer, J. Mater. Chem. 0959-9428 14, 3246 (2004). 10.1039/b405776g
21. M. M. Frank, Y. J. Chabal, and G. D. Wilk, Appl. Phys. Lett. 0003-6951 82, 4758 (2003). 10.1063/1.1585129
22. J. Kim, K. Chakrabarti, J. Lee, K. -Y. Oh, and C. Lee, Mater. Chem. Phys. 0254-0584 78, 733 (2003). 10.1016/S0254-0584(02)00375-9
23. M. D. Groner, F. H. Fabreguette, J. W. Elam, and S. M. George, Chem. Mater. 0897-4756 16, 639 (2004). 10.1021/cm0304546
24. J. Hafner, J. Comput. Chem. 0192-8651 29, 2044 (2008). 10.1002/jcc.21057
25. MedeA 2.5, Materials Design, Inc., Santa Fe, NM (2010).
26. J. P. Perdew, K. Burke, and M. Ernzerhof, Phys. Rev. Lett. 0031-9007 77, 3865 (1996). 10.1103/PhysRevLett.77.3865
27. See supplementary material at http://dx.doi.org/10.1063/1.3500821 E-APPLAB-97-073041 for structures and energies of these species.