Self-powered gate driver for normally on silicon carbide junction field-effect transistors without external power supply

IEEE Transactions on Power Electronics

Volumn 28, Issue 3, 2013, Pages 1488-1501

  Peftitsis, Dimosthenis ^a   Rabkowski, Jacek ^a   Nee, Hans Peter ^a  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

Gate driver power supply; normally ON silicon carbide (SiC) junction field effect transistors (JFETs); protection circuit; silicon carbide

Indexed keywords

COUNTS-AS; DC-LINK VOLTAGES; EXPERIMENTAL INVESTIGATIONS; EXTERNAL POWER SUPPLIES; GATE DRIVERS; GATE DRIVES; GATE-SOURCE VOLTAGE; HALF-BRIDGE CONVERTERS; JUNCTION FIELD-EFFECT TRANSISTORS; NORMALLY ON; ON-STATE RESISTANCE; OPERATING STATE; POWER SUPPLY; PROTECTION CIRCUITS; SELF-POWERED; STEADY-STATE OPERATION; VOLTAGE-CONTROLLED;

FIELD EFFECT TRANSISTORS; INSULATED GATE BIPOLAR TRANSISTORS (IGBT);

SILICON CARBIDE;

EID: 84867799218     PISSN: 08858993     EISSN: None     Source Type: Journal    
DOI: 10.1109/TPEL.2012.2209185     Document Type: Article

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