A shoot-through protection scheme for converters built with SiC JFETs

IEEE Transactions on Industry Applications

Volumn 46, Issue 6, 2010, Pages 2495-2500

  Lai, Rixin ^a   Wang, Fei ^b   Burgos, Rolando ^c   Boroyevich, Dushan ^d   Zhang, Di ^d   Ning, Puqi ^d  

^a GE GLOBAL RESEARCH   (United States)

^b University of Tennessee   (United States)

^c ABB INC   (United States)

^d VIRGINIA POLYTECHNIC INSTITUTE AND STATE UNIVERSITY   (United States)

Author keywords

shoot through protection; SiC JFETs

Indexed keywords

AC-AC CONVERTERS; BIDIRECTIONAL SWITCH; CIRCUIT DESIGNS; DC-LINK; DESATURATION; HIGH TEMPERATURE; MOSFETS; NORMALLY ON; OPERATING CAPABILITY; PROTECTION MECHANISMS; PROTECTION SCHEMES; SHOOT-THROUGH; SIC JFETS; SWITCHING PERFORMANCE;

ACTIVE FILTERS; BIPOLAR TRANSISTORS; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON CARBIDE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 78649351103     PISSN: 00939994     EISSN: None     Source Type: Journal    
DOI: 10.1109/TIA.2010.2070785     Document Type: Article

References (13)

1. C. Callaway, Y. Wang, R. Burgos, T. P. Chow, F. Wang, and D. Boroyevich, "Evaluation of SiC JFETs for a three-phase current-source rectifier with high switching frequency, " in Proc. IEEE APEC, 2007, pp. 345-351.
2. L. Lorenz and H. Mitlehner, "Key power semiconductor device concepts for the next decade, " in Conf. Rec. IEEE IAS Annu. Meeting, Oct. 2002, pp. 564-569.
3. J. W. Kolar, U. Drofenik, J. Biela, M. L. Heldwein, H. Ertl, T. Friedli, and S. D. Round, "PWM converter power density barriers, " in Proc. PCC, Nagoya, Japan, Apr. 2007, pp. 9-29.
4. P. Friedrichs and R. Rupp, "Silicon carbide power devices-Current developments and potential applications, " in Proc. EPE, 2005, pp. P.1-P.11.
5. C. Rebbereh, H. Schierling, and M. Braun, "First inverter using silicon carbide power switches only, " in Proc. EPE, 2003, pp. 1-5.
6. H. R. Chang, E. Hanna, and A. V. Radun, "Demonstration of silicon carbide (SiC)-based motor drive, " in Proc. IEEE IECON, 2003, pp. 1116-1121.
7. T. Friedli, S. D. Round, and J. W. Kolar, "A 100 kHz SiC sparse matrix converter, " in Proc. IEEE PESC, 2007, pp. 2148-2154.
8. C. Cass, R. Burgos, F. Wang, and B. Dushan, "Three-phase AC buck rectifier using normally-on SiC JFETs at 150 kHz switching frequency, " in Proc. IEEE PESC, 2007, pp. 2162-2167.
9. E. Cilio, J. M. Hornberger, B. McPherson, R. M. Schupbach, and A. B. Lostetter, "Design and fabrication of a high temperature (250 °C baseplate), high power density silicon carbide (SiC) multichip power module (MCPM) inverter, " in Proc. IEEE IECON, 2006, pp. 1822-1827.
10. J. M. Hornberger, E. Cilio, B. McPherson, R. M. Schupbach, and A. B. Lostetter, "A fully integrated 300 °C, 4 KW, 3-phase, SiC motor drive module, " in Proc. IEEE PESC, 2007, pp. 1048-1053.
11. "BLDC Motor Drive Over Current Protection (Over Current Faults) - Part 1, " in Hitachi America Motor Control Tech Tips, vol. 2, no. 17, Oct. 2003.
12. S. K. Biswas, B. Basak, and K. S. Rajashekara, "Gate drive methods for IGBTs in bridge configurations, " in Conf. Rec. IEEE IAS Annu. Meeting, 1994, pp. 1310-1316.
13. R. Lai, F. Wang, P. Ning, D. Zhang, D. Jiang, R. Burgos, D. Boroyevich, K. J. Karimi, and V. D. Immanuel, "Development of a 10 kW high power density three-phase ac-dc-ac converter using SiC devices, " in Proc. EPE, 2009, pp. 1-12.