HF gate drive circuit for a normally-on SiC JFET with inherent safety

2009 13th European Conference on Power Electronics and Applications, EPE '09

Volumn , Issue , 2009, Pages

  Takuno, Tsuguhiro ^a   Hikihara, Takashi ^a   Tsuno, Takashi ^b   Hatsukawa, Satoshi ^b  

^a KYOTO UNIVERSITY   (Japan)

^b SUMITOMO ELECTRIC INDUSTRIES LTD   (Japan)

Author keywords

Device application; High frequency power converter; High speed drive; JFET; New switching devices; Power semiconductor device; Power supply; Safety; SiC device; Silicon carbide

Indexed keywords

DEVICE APPLICATION; HIGH FREQUENCY POWER CONVERTER; HIGH SPEED DRIVES; NEW SWITCHING DEVICES; POWER SEMICONDUCTOR DEVICES; POWER SUPPLY; SIC-DEVICE;

ELECTRIC POWER SUPPLIES TO APPARATUS; ELECTRIC POWER TRANSMISSION NETWORKS; ELECTRIC POWER UTILIZATION; PHOTOLITHOGRAPHY; POWER CONVERTERS; POWER ELECTRONICS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR SWITCHES; SILICON CARBIDE; SWITCHING FREQUENCY;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 72949124129     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

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3. R. Kelly and M. S. Mazzola, SiC JFET Gate Driver Design for Use in DC/DC Converters, IEEE APEC 2006, 179-182 (2006).
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5. Analog Devices Isolated, Precision Half-Bridge Driver ADuM1233 Datasheet Rev. B, (2007).
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