Novel AC-coupled gate driver for ultrafast switching of normally off SiC JFETs

IEEE Transactions on Power Electronics

Volumn 27, Issue 7, 2012, Pages 3452-3463

  Wrzecionko, Benjamin ^a   Bortis, Dominik ^a   Biela, Jürgen ^a   Kolar, Johann W ^a  

^a ETH ZURICH   (Switzerland)

Author keywords

JFET switches; power electronics; power semiconductor switches; silicon carbide

Indexed keywords

DIE AREA; DUTY CYCLES; FAST SWITCHING; GATE CURRENT; GATE DRIVERS; GATE VOLTAGES; GATE-DRAIN CAPACITANCE; GATE-SOURCE VOLTAGE; HIGH NOISE; LOW THRESHOLD VOLTAGE; NORMALLY OFF; ON-RESISTANCE; POWER SEMICONDUCTOR SWITCHES; SELF-HEATING; SWITCHING OPERATIONS; ULTRAFAST SWITCHING; UNIPOLAR DEVICES;

MOS DEVICES; POWER ELECTRONICS; POWER QUALITY; SEMICONDUCTOR SWITCHES; SWITCHING;

SILICON CARBIDE;

EID: 84859762860     PISSN: 08858993     EISSN: None     Source Type: Journal    
DOI: 10.1109/TPEL.2011.2182209     Document Type: Article

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