Gate driver for SiC JFETs with protection against normally-on behaviour induced fault

Electronics Letters

Volumn 47, Issue 6, 2011, Pages 375-377

  Guedon F ^a   Singh, S K ^a   McMahon, R A ^a   Udrea, F ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

GATE DRIVERS; JUNCTION FIELD-EFFECT TRANSISTORS;

SILICON CARBIDE;

JUNCTION GATE FIELD EFFECT TRANSISTORS;

EID: 79957558715     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el.2011.0241     Document Type: Article

References (7)

1. Tolbert, L.M., Ozpineci, B., Islam, S.K., and Peng, F.Z.:'Impact of SiC power electronic devices for hybrid electric vehicles', SAE 2002 Trans. J. Passenger Cars - Electron. Electr. Syst., September, 2003, p. 765-771
2. Mihaila, A., Udrea, F., Azar, R., Brezeanu, G., and Amaratunga, G.:'Static and dynamic behaviour of SiC JFET/Si MOSFET cascade configuration for high-performance power switches', Silicon Carbide and Related Materials 2001, Proc., Materials Science Forum, Vols. 389-393, p. 1239-1242
3. Zhang, H., and Tolbert, L.M.:'Efficiency of SiC JFET-based inverters', IEEE Conf. on Industrial Electronics and Applications, Xi'an, China, May, 2009, p. 2056-2059
4. Mitlehner, H., Bartsch, W., Otto Dohnke, K., Friedrichs, P., Kaltschmidt, R., Weinert, U., Weis, B., and Stephani, D.:'Dynamic characteristics of high voltage 4H-SiC vertical JFETs', Proc. 11th Int. Symp. on Power Semiconductor Devices and ICs, Toronto, (ISPSD 1999), Canada, p. 339-342
5. Mihaila, A., Udrea, F., Godignon, P., Brezeanu, G., Malhan, R.K., Rusu, A., Millan, J., and Amaratunga, G.A.J.:'Towards fully integrated SiC cascode power switches for high voltage applications', 15th, Int. Symp. on Power Semiconductor Devices and ICs, (ISPSD 2003), Cambridge, UK, April, 2003, p. 379-382
6. Singh, S.K., Guedon, F., and McMahon, R.:'Comparative switching behaviour of silicon transistors and practical silicon carbide transistors', 8th, Int. Conf. on Power Electronics and Drive Systems, (PEDS 2009), Taipei, Taiwan, November, 2009, p. 585-590
7. Domes, D., Werner, R., Hofmann, W., Domes, K., and Krauß, S.:'A new, universal and fast switching gate-drive-concept for SiC-JFETs based on current source principle', 37th, IEEE Power Electronics Specialists Conf., Jeju, Republic of Korea, June, 2006, p. 1-6