Silicon-on-insulator-based high-voltage, high-temperature integrated circuit gate driver for silicon carbide-based power field effect transistors

IET Power Electronics

Volumn 3, Issue 6, 2010, Pages 1001-1009

  Huque, M A ^a   Tolbert, L M ^a,b   Blalock, B J ^a   Islam, S K ^a  

^a University of Tennessee   (United States)

^b OAK RIDGE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMBIENT TEMPERATURES; CIRCUIT GATES; COMPLEMENTARY METAL OXIDE SEMICONDUCTORS; COOLING MECHANISM; CURRENT DRIVING; DRIVER CIRCUIT; DRIVING RANGE; DUTY CYCLES; FET SWITCHES; GATE DRIVER CIRCUIT; GATE DRIVERS; GATE DRIVES; GEOTHERMAL POWER GENERATION; HARSH ENVIRONMENT; HIGH TEMPERATURE; HIGH-TEMPERATURE ENVIRONMENT; HIGH-VOLTAGES; HYBRID ELECTRIC VEHICLE; JUNCTION FIELD EFFECT TRANSISTORS; LIQUID COOLING; LOGIC UNIT; METAL OXIDE SEMICONDUCTOR; METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTORS; NORMALLY OFF; NORMALLY ON; PERFORMANCE DEGRADATION; POWER CONVERSION MODULES; POWER DEVICES; POWER ELECTRONIC CIRCUITS; POWER FETS; POWER FIELD-EFFECT TRANSISTORS; POWER MOSFETS; POWER SWITCHES; POWER-TO-WEIGHT RATIOS; PROTOTYPE CIRCUITS; ROOM TEMPERATURE; SILICON ON INSULATOR; SILICON-ON-INSULATORS; SWITCHING ELEMENTS; SYSTEM COMPLEXITY; TEMPERATURE CYCLES; VOLUME RATIO;

AUTOMOBILES; DC POWER TRANSMISSION; ELECTRIC SWITCHES; ELECTRIC VEHICLES; ELECTRON BEAM LITHOGRAPHY; ELECTRON MULTIPLIERS; GEOTHERMAL ENERGY; GEOTHERMAL LOGGING; HEAT SINKS; INTEGRATED CIRCUITS; MESFET DEVICES; METALLIC COMPOUNDS; METALS; MOS DEVICES; MOSFET DEVICES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR JUNCTIONS; SILICON CARBIDE;

FIELD EFFECT TRANSISTORS;

EID: 78651583793     PISSN: 17554535     EISSN: 17554543     Source Type: Journal    
DOI: 10.1049/iet-pel.2008.0287     Document Type: Article

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