Comparative analysis of commercially available silicon carbide transistors

Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC

Volumn , Issue , 2012, Pages 2509-2515

  Lemmon, Andrew ^a   Mazzola, Michael ^a   Gafford, James ^a   Speer, Kevin M ^b  

^a MISSISSIPPI STATE UNIVERSITY   (United States)

^b SemiSouth Laboratories Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMMERCIAL MARKET; COMPARATIVE ANALYSIS; CRITICAL FACTORS; ELECTRONICS APPLICATIONS; ELECTRONICS MARKETS; INDUSTRIAL POWER; MOSFETS; POWER TRANSISTORS;

EXHIBITIONS; FACTOR ANALYSIS; RELIABILITY ANALYSIS; SILICON CARBIDE; TRANSISTORS;

POWER ELECTRONICS;

EID: 84860191495     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/APEC.2012.6166175     Document Type: Conference Paper

References (32)

1. T. Zhao, J. Wang, A.Q. Huang, and A. Agarwal, "Comparisons of SiC MOSFET and Si IGBT Based Motor Drive Systems," 2007 IEEE Industry Applications Annual Meeting, Sep. 2007, pp. 331-335.
2. F. Björk, M. Treu, J. Hilsenbeck, M. a Kutschak, D. Domes, and R. Rupp, "1200V SiC JFET in Cascode Light Configuration: Comparison versus Si and SiC Based Switches," Materials Science Forum, vol. 679-680, Mar. 2011, pp. 587-590.
3. R.L. Kelley, M. Mazzola, S. Morrison, W. Draper, I. Sankin, D. Sheridan, and J. Casady, Power factor correction using an enhancement-mode SiC JFET, IEEE, 2008.
4. Treu, M., Rupp, R., Blaschitz, P., Ruschenschmidt, K., Sekinger, T., Friedrichs, P., et al. (2007). Strategic Considerations for Unipolar SiC Switch Options: JFET vs. MOSFET. 2007 IEEE Industry Applications Annual Meeting (pp. 324-330). IEEE.
5. Treu, M., Rupp, R., & Solkner, G. (2010). Reliability of SiC power devices and its influence on their commercialization - review, status, and remaining issues. 2010 IEEE International Reliability Physics Symposium (pp. 156-161). IEEE.
6. D. Stephani, "Status, prospects and commercialization of SiC power devices," IEEE Device Research Conference, p. 14, Notre Dame, IN, June 25-27, 2001.
7. ROHM Semiconductor, Inc (December 21, 2010). "The World's First Low On-Resistance High-Speed SiC Transistor (DMOSFET)". Press Release. Retrieved June 22, 2011.
8. T. Nakamura, M. Sasagawa, Y. Nakano, T. Otsuka, and M. Miura, Large current SiC power devices for automobile applications, IEEE, 2010.
9. P. Muzykov, R. Kennedy, Q. Zhang, C. Capell, A. Burk, A. Agarwal, and T. Sudarshan, "Physical phenomena affecting performance and reliability of 4H-SiC bipolar junction transistors," Microelectronics Reliability, vol. 49, pp. 32-37, 2009.
10. L. Farese, G. Malm, M. Domeij, and M. Ostling, "Experimental Study of Degradation in 4H-SiC BJTs by Means of Electrical Characterization and Electroluminescence," Materials Science Forum, vols. 645-648, pp. 1037-40, 2010.
11. J. Palmour, Plenary presentation, 8th European Conference on Silicon Carbide and Related Materials: Oslo, Norway, September 2010.
12. K. Matocha, "Challenges in SiC power MOSFET design," Solid-State Electronics, vol. 52, pp. 1631-35, 2008.
13. K. Speer, D. Sheridan, K. Chatty, V. Bondarenko, K. Matocha, and J. Casady, "Demonstration of SiC vertical trench JFET reliability," to be published in the Proceedings of the 14th International Conference on Silicon Carbide and Related Materials: Cleveland, Ohio, U.S.A., Sept. 2011.
14. J. Lutz and T. Reimann, "Advanced Design with MOSFET and IGBT Power Modules" Tutorial 8, PCIM Europe, Nuremberg, Germany, 22-24 May 2007.
15. "CMF20120D-Silicon Carbide Power MOSFET, Rev. A" Cree Inc, Durham, NC.
16. "SJEP120R063 Normally-OFF Trench Silicon Carbide Power JFET, Rev 1.4" SemiSouth Laboratories Inc, Starkville, MS.
17. "SJDP120R045 Normally-On Trench Silicon Carbide Power JFET, Rev 1.3" SemiSouth Laboratories Inc, Starkville, MS.
18. R.L. Kelley, M. Mazzola, S. Morrison, W. Draper, I. Sankin, D. Sheridan, and J. Casady, Power factor correction using an enhancement-mode SiC JFET, IEEE, 2008.
19. "Operation and intended use of the SGDR2500P2 dual-stage driver board," SemiSouth Application Note AN-SS05 Rev 1.0, June 2011.
20. "Silicon Carbide Enhancement-Mode Junction Field Effect Transistor and Recommendations for Use," SemiSouth Application Note AN-SS01 Rev 1.0, 2011.
21. J. Biela, M. Schweizer, S. Waffler, and J.W. Kolar, "SiC vs. Si - Evaluation of Potentials for Performance Improvement of Inverter and DC-DC Converter Systems by SiC Power Semiconductors," IEEE Transactions on Industrial Electronics, vol. 58, 2010, pp. 2872-2882.
22. "SJDC120R045 Normally-On Trench Silicon Carbide Power JFET, Rev 1.2" SemiSouth Laboratories Inc, Starkville, MS.
23. B. Burger, D. Kranzer, and O. Stalter, "Cost Reduction of PV-Inverters with SiC-DMOSFETs," Integrated Power Systems (CIPS), 2008 5th International Conference on, pp. 1-5.
24. Z. Chen, A. Grekov, R. Fu, and E. Santi, "Vertical SiC JFET model with unified description of linear and saturation operating regions," ECCE 2009, 2009.
25. A. Grekov, Z. Chen, E. Santi, and J. Hudgins, "Parameter extraction procedure for high power SiC JFET," ECCE 2009, 2009.
26. E. Platania et al., A Physics-Based Model for a SiC JFET Device Accounting for the Mobility Dependence on Temperature and Electric Field. IEEE, 2008, pp. 1-8.
27. Y. Wang, C. Cass, T. Chow, F. Wang, and D. Boroyevich, SPICE Model of SiC JFETs for Circuit Simulations. IEEE, 2006, pp. 212-215.
28. B. Hull, M. Das, F. Husna, R. Callanan, A. Agarwal, and J. Palmour, "20 A, 1200 V 4H-SiC DMOSFETs for energy conversion systems," in 2009 IEEE Energy Conversion Congress and Exposition, 2009, pp. 112-119.
29. B. Hulla et al., 4H-SiC DMOSFETs for power conversion applications successes and ongoing challenges. IEEE, 2010, pp. 197-200.
30. B. Callanan, Application Considerations for SiC MOSFETs, Cree Application Note, January. 2011.
31. J. Casady, R. Schrader, D. Sheridan, V. Bondarenko, "1200 V Enhancement-mode SiC VJFET Power Modules", PCIM Europe, Nuremberg, Germany, 17-19 May 2011.
32. J. Richmond, S. Leslie, B. Hull, M. Das, A. Agarwal, and J. Palmour, Roadmap for megawatt class power switch modules utilizing large area silicon carbide MOSFETs and JBS diodes. IEEE, 2009, pp. 106-111.