Comparative switching behaviour of silicon transistors and practical silicon carbide transistors

Proceedings of the International Conference on Power Electronics and Drive Systems

Volumn , Issue , 2009, Pages 585-590

  Singh, Santosh Kumar ^a   Guedon, Florent ^a   McMahon, Richard ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

Cascode; Di dt; Dv dt; IGBT; JFET; MOSFET; SiC; Switching characteristics

Indexed keywords

CASCODE; CASCODE DEVICE; EXPERIMENTAL INVESTIGATIONS; EXPERIMENTAL METHODS; FAST SWITCHING; INDUCTIVE LOADS; MOS-FET; SIC DEVICES; SILICON TRANSISTORS; SWITCHING CHARACTERISTICS; TRANSIENT POWER DISSIPATION;

ACTIVE FILTERS; CHOPPERS (CIRCUITS); EQUIVALENT CIRCUITS; INSULATED GATE BIPOLAR TRANSISTORS (IGBT); MOSFET DEVICES; POWER ELECTRONICS; SILICON; SILICON CARBIDE; SWITCHING;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 77950868970     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PEDS.2009.5385872     Document Type: Conference Paper

References (6)

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