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1
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79953755962
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Normally - On devices and circuits, SiC and high temperature : Using SiC JFETs in power converters
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Berlin-Offenbach, CIPS
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Dominique Bergogne, Bruno Allard, Dominique Planson, Dominique Tournier, Hervé Morel "Normally - On devices and circuits, SiC and high temperature : using SiC JFETs in power converters", VDE VERLAG GMBH, Berlin-Offenbach, CIPS 2008.
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Vde Verlag Gmbh
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Bergogne, D.1
Allard, B.2
Planson, D.3
Tournier, D.4
Morel, H.5
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2
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79953745536
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A simple low cost gate drive method for practical use of SiCJFET in SMPS
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Melkongan A., Hofsajer I., Round S.et Kolar J., "A simple low cost gate drive method for practical use of SiCJFET in SMPS", in "EPE Dresden", 2005.
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(2005)
EPE Dresden
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Melkongan, A.1
Hofsajer, I.2
Round, S.3
Kolar, J.4
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3
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79953756562
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Design of a gate drive circuit for use with SiC JFETs
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Bjorn Allebrand et Hans Peter Nee, "Design of a Gate Drive Circuit For use with SiC JFETs", APEC, 2004.
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(2004)
APEC
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Allebrand, B.1
Nee, H.P.2
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7
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2342476450
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A novel SiC JFET gate drive circuit for sparse matrix converter applications
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Marcelo L. Heldwein et Johann W.Kolar, "A novel SiC JFET gate drive circuit for sparse matrix converter applications", IEEE Trans. on Power Electronics, 2004.
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IEEE Trans. on Power Electronics
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Heldwein, M.L.1
Kolar, J.W.2
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9
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33744975291
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Inherently safe DC/DC converter using a normally-on SiC JFET
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DOI 10.1109/APEC.2005.1453244, 1453244, Twentieth Annual IEEEApplied Power ElectronicsConference and Exposition, APEC 2005
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R.L. Kelley, M.S. Mazzola, W.A.Draper et J. Casady, "Inherently SafeDC/DC Converter Using a Normally-On SiC JFET", Transactions of APEC 2005.Volume 3, 6-10 March 2005 Page(s): 1561 - 1565. (Pubitemid 43860994)
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Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC
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Kelley, R.L.1
Mazzola, M.S.2
Draper, W.A.3
Casady, J.4
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11
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79953737236
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IEEE
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Round S., Heldwein M., J. Kolar, Hofsajer I. et Friedrich P., "A SiC JFET Driver for a 5kW, 150kHz Three phases PWM Converter", IEEE, 2005.
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A SiC JFET Driver for a 5kW, 150kHz Three Phases PWM Converter
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Round, S.1
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Friedrich, P.4
Kolar, J.5
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12
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0342571640
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Materials Science Forum
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P. Friedrichs, H. Mitlehner, R. Kaltschmidt, U. Weinert, W. Bartsch, C. Hecht, K. O. Dohnke, B. Weis, D. Stephani, "Static and Dynamic Characteristics of 4HSiC JFETs Designed for Different Blocking Categories", Materials Science Forum Vol.338-342, 2000, p.1243-1246.
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Friedrichs, P.1
Mitlehner, H.2
Kaltschmidt, R.3
Weinert, U.4
Bartsch, W.5
Hecht, C.6
Dohnke, K.O.7
Weis, B.8
Stephani, D.9
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13
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79953735319
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Minimization of Drain-to-gate interaction in a SiC JFET inverter using an external gate-source capacitor
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Nuremberg
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O. Berry, Y. Hamieh, S. Raël, F. Meibody-Tabar, S. Vieillard, D. Bergogne, H. Morel, "Minimization of Drain-to-gate interaction in a SiC JFET inverter using an external gate-source capacitor", ICSCRM 2009, Nuremberg.
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(2009)
ICSCRM
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Berry, O.1
Hamieh, Y.2
Raël, S.3
Meibody-Tabar, F.4
Vieillard, S.5
Bergogne, D.6
Morel, H.7
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14
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48949097679
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Strategic considerations for unipolar SiC switch options: JFET vs MOSFET
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M. Treu, R. Rupp, P. Blaschitz, K. Rüschenschmidt, Th. Sekinger, P. Friedrichs, R. Elpelt, D. Peters, "Strategic considerations for unipolar SiC switch options: JFET vs MOSFET", IEEE IAS, 2007, pp. 324-30.
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IEEE IAS
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Treu, M.1
Rupp, R.2
Blaschitz, P.3
Rüschenschmidt, K.4
Sekinger, Th.5
Friedrichs, P.6
Elpelt, R.7
Peters, D.8
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15
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84991255069
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SiC JFET for high temperature power switches
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VDE VERLAG GMBH, Berlin-Offenbach
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D. Bergogne, D. Tournier, R. Mousa, M.S. Koor, D. Planson, H. Morel, B. Allard, "SiC JFET for high temperature power switches", VDE VERLAG GMBH, Berlin-Offenbach, CIPS 2008.
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CIPS 2008
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Bergogne, D.1
Tournier, D.2
Mousa, R.3
Koor, M.S.4
Planson, D.5
Morel, H.6
Allard, B.7
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