Temperature-dependent characteristics of SiC devices: Performance evaluation and loss calculation

IEEE Transactions on Power Electronics

Volumn 27, Issue 2, 2012, Pages 1013-1024

  Jiang, Dong ^a   Burgos, Rolando ^b   Wang, Fei Fred ^a   Boroyevich, Dushan ^c  

^a University of Tennessee   (United States)

^b ABB INC   (United States)

^c VIRGINIA POLYTECHNIC INSTITUTE AND STATE UNIVERSITY   (United States)

Author keywords

High temperature; JFET; loss; Schottky barrier diode (SBD); silicon carbide (SiC); switching

Indexed keywords

AC-DC-AC CONVERTERS; ANTI-PARALLEL DIODES; BODY DIODE; BRIDGE TESTS; CONDUCTION LOSS; CONDUCTION PATHS; HIGH TEMPERATURE; LOSS CALCULATION; OPERATING TEMPERATURE; PERFORMANCE EVALUATION; REVERSE RECOVERY; SCHOTTKY BARRIER DIODE (SBD); SCHOTTKY DIODES; SEMICONDUCTOR LOSS; SI DEVICES; SIC DEVICES; SIC SCHOTTKY DIODE; STEADY STATE PERFORMANCE; SWITCHING BEHAVIORS; SWITCHING LOSS; TEMPERATURE DEPENDENT;

DIODES; EQUIPMENT TESTING; JUNCTION GATE FIELD EFFECT TRANSISTORS; LOSSES; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR DIODES; SILICON CARBIDE; SWITCHING;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 84862920940     PISSN: 08858993     EISSN: None     Source Type: Journal    
DOI: 10.1109/TPEL.2011.2159624     Document Type: Article

References (19)

1. S. Round, M. Heldwein, J. Kolar, I. Hofsajer, and P. Friedrichs, "A SiC JFET driver for a 5 kW, 150 kHz three-phase PWM converter, " in Proc. IEEE Ind. Appl. Conf., 40th IAS Annu. Meeting, Conf. Rec. 2005, Oct. 2-6, 2005, vol. 1, pp. 410-416. (Pubitemid 44042481)
2. H. Zhang, L. M. Tolbert, B. Ozpineci, and M. S. Chinthavali, "A SiCbased converter as a utility interface for a battery system, " in Proc. IEEE Ind. Appl. Conf., 41st IAS Annu. Meeting, Conf. Rec. 2006, Oct., vol. 1, pp. 346-350. (Pubitemid 47505101)
3. T. Zhao, J. Wang, A. Q. Huang, and A. Agarwal, "Comparisons of SiC MOSFET and Si IGBT based motor drive systems, " in Proc. Ind. Appl. Conf., 42nd IAS Annu. Meeting, Conf. Rec. 2007 IEEE, Sep. 23-27, pp. 331-335.
4. C. J. Cass, Y. Wang, R. Burgos, T. P. Chow, F. Wang, and D. Boroyevich, "Evaluation of SiC JFETs for a three-phase current-source rectifier with high switching frequency, " in Proc. IEEE 22nd Annu. Appl. Power Electron. Conf., Feb. 25 to Mar. 1, 2007, pp. 345-351.
5. H.-R. Chang, E. Hanna, and A. V. Radun, "Development and demonstration of silicon carbide (SiC) motor drive inverter modules, " in Proc. IEEE 34th Annu. Power Electron. Spec. Conf., Jun. 15-19, 2003, vol. 1, pp. 211-216.
6. D. Bergogne, H. Morel, D. Planson, D. Tournier, P. Bevilacqua, B. Allard, R. Meuret, S. Vieillard, S. Rael, and F. MeibodyTabar, "Towards an airborne high temperature SiC inverter, " in Proc. IEEE Power Electron. Spec. Conf., Jun. 15-19, 2008, pp. 3178-3183.
7. T. Funaki, A. S. Kashyap, H. A. Mantooth, J. C. Balda, F. D. Barlow, T. Kimoto, and T. Hikihara, "Characterization of SiC diodes in extremely high temperature ambient, " in Proc. IEEE 21st Annu. Applied Power Electron. Conf. Expo., Mar. 19-23, 2006, pp. 19-23.
8. T. Funaki, J. C. Balda, J. Junghans, A. S. Kashyap, H. A. Mantooth, F. Barlow, T. Kimoto, andT. Hikihara, "Power conversion with SiC devices at extremely high ambient temperatures, " IEEE Trans. Power Electron., vol. 22, no. 4, pp. 1321-1329, Jul. 2007. (Pubitemid 47098833)
9. R. Singh, J. A. Cooper, Jr., M. R. Melloch, T. P. Chow, and J. W. Palmour, "SiC power Schottky and PiN diodes, " IEEE Trans. Electron Devices, vol. 49, no. 4, pp. 665-672, Apr. 2002. (Pubitemid 34495341)
10. A. Elasser, M. H. Kheraluwala, M. Ghezzo, R. L. Steigerwald, N. A. Evers, J. Kretchmer, and T. P. Chow, "A comparative evaluation of new silicon carbide diodes and state-of-the-art silicon diodes for power electronic applications, " IEEE Trans. Ind. Appl., vol. 39, no. 4, pp. 915-921, Jul./Aug. 2003.
11. D.-W. Chung and S.-K. Sul, "Minimum-loss strategy for three-phase PWM rectifier, " IEEE Trans. Ind. Electron., vol. 46, no. 3, pp. 517-526, Jun. 1999.
12. F. Blaabjerg, U. Jaeger, and S. Munk-Nielsen, "Power losses in PWM-VSI inverter using NPT or PT IGBT devices, " IEEE Trans. Power Electron., vol. 10, no. 3, pp. 358-367, May 1995.
13. J. W. Kolar, H. Ertl, and F. C. Zach, "Influence of the modulation method on the conduction and switching losses of a PWM converter system, " IEEE Trans. Ind. Appl., vol. 27, no. 6, pp. 1063-1075, Nov./Dec. 1991.
14. L. Zhang, X. Yang, Y. Pei, and Z. Wang, "Parasitic parameter extraction and loss analysis of a 3kW MOSFET hybrid integrated power electronics module (IPEM) for three-phase motor driver, " in Proc. IEEE 37th Power Electron. Spec. Conf., Jun. 18-22, 2006, pp. 1-7.
15. R. Burgos, Z. Chen, D. Boroyevich, and F. Wang, "Design considerations of a fast 0-Ω gate-drive circuit for 1. 2 kV SiC JFET devices in phase-leg configuration, " in Proc. IEEE Energy Convers. Congr. Expos., Sep. 20-24, 2009, pp. 2293-2300.
16. R. Lai, F. Wang, R. Burgos, and D. Boroyevich, "A shoot-through protection scheme for converters built with SiC JFETs, " in Proc. IEEE Energy Convers. Congr. Expo., Sep. 20-24, 2009, pp. 2301-2305.
17. B. Hua, Z. Zhengming, and C. Mi, "Framework and research methodology of short-timescale pulsed power phenomena in high-voltage and highpower converters, " IEEE Trans. Ind. Electron., vol. 56, no. 3, pp. 805-816, Mar. 2009.
18. T. Friedli, S. D. Round, D. Hassler, and J. W. Kolar, "Design and performance of a 200-kHz All-SiC JFET current DC-link back-to-back converter, " IEEE Trans. Ind. Appl., vol. 45, no. 5, pp. 1868-1878, Sep./Oct. 2009.
19. S. Pyo and K. Sheng, "Junction temperature dynamics of powerMOSFET and SiC diode, " in Proc. IEEE 6th Int. Power Electron. Motion Control Conf., May 17-20, 2009, pp. 269-273.