Silicon carbide power modules for high-temperature applications

IEEE Transactions on Components, Packaging and Manufacturing Technology

Volumn 2, Issue 2, 2012, Pages 208-216

  Palmer, Michael J ^a   Johnson, R Wayne ^a   Autry, Tracy ^b   Aguirre, Rizal ^b   Lee, Victor ^b   Scofield, James D ^c  

^a AUBURN UNIVERSITY   (United States)

^b MICROSEMI CORPORATION   (United States)

^c AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

Hermetic power package; high current switching; high temperature operation; SiC die attach

Indexed keywords

ELECTRICAL TESTING; HIGH CURRENT SWITCHING; JUNCTION FIELD-EFFECT TRANSISTORS; MATERIALS AND PROCESS; MULTI-CHIP; POWER MODULE; POWER PACKAGE; SIC DIE ATTACH; SILICON CARBIDE DEVICES; THERMAL MODELING;

FIELD EFFECT TRANSISTORS; TESTING;

SILICON CARBIDE;

EID: 84859080862     PISSN: 21563950     EISSN: None     Source Type: Journal    
DOI: 10.1109/TCPMT.2011.2171343     Document Type: Article

References (21)

1. 2 1.9 kV enhancement-mode SiC VJFETs," in Proc. 21st Int. Symp. Power Semicond. Devices, Barcelona, Spain, Jun. 2009, pp. 335-338.
2. A. Ritenour, V. Bondarenko, R. Kelley, and D. C. Sheridan, "Electrical characterization of large area 800 V enhancement-mode SiC VJFETs for high temperature applications," in Proc. Eur. Conf. Silicon Carbide Related Mater., Barcelona, Spain, Sep. 2008, pp. 1-3.
3. A. Ritenour, I. Sankin, N. Merrett, W. King, V. Bondarenko, R. Kelley, W. Draper, and D. C. Sheridan, "High temperature electrical characterization of 20 A 800 V enhancement-mode SiC VJFETs," in Proc. IMAPS Int. Conf. High Temperat. Electron., Albuquerque, NM, May 2008, p. 000103.
4. L. D. Stevanovic, K. S. Matocha, P. A. Losee, J. S. Glaser, J. J. Nasadoski, and S. D. Arthur, "Recent advances in silicon carbide MOSFET power devices," in Proc. 25th Annu. IEEE Appl. Power Electron. Conf. Exposit., Palm Springs, CA, Feb. 2010, pp. 401-407.
5. R. W. Johnson, C. Wang, Y. Liu, and J. D. Scofield, "Power device packaging technologies for extreme environments," IEEE Trans. Electron. Packag. Manuf., vol. 30, no. 3, pp. 182-193, Jul. 2007. (Pubitemid 47098802)
6. T. Stockmeier, "From packaging to 'un'-packaging - trends in power semiconductor modules," in Proc. 20th Int. Symp. Power Semicond. Devices IC's, Orlando, FL, May 2008, pp. 12-19.
7. J. Schulz-Harder, "DBC substrates as a base for power MCM's," in Proc. 3rd Electron. Packag. Technol. Conf., Dec. 2000, pp. 315-320.
8. J. F. Burgess, C. A. Neugebauer, G. Flanagan, and R. E. Moore, "The direct bonding of metals to ceramics and application in electronics," Electrocomp. Sci. Technol., vol. 2, no. 4, pp. 233-240, 1976.
9. A. H. E. Sawy and M. F. Fahmy, "Brazing of Si3N4 ceramic to copper," J. Mater. Process. Technol., vol. 77, nos. 1-3, pp. 266-272, May 1998.
10. A. P. Tomsia, "Ceramic/metal joining for structures and materials," J. Phys. IV, vol. 3, no. C7, pp. 1317-1326, Nov. 1993.
11. J. A. Fernie and K. I. Ironside, "Ceramic brazing," Mater. World, vol. 7, no. 11, pp. 686-688, Nov. 1999.
12. T. Tilford, H. Lu, and C. Bailey, "Thermo-mechanical modelling of power electronics module structures," in Proc. 8th Electron. Packag. Technol. Conf., Singapore, Dec. 2006, pp. 214-219.
13. M. Gunther, K. J. Wolter, M. Rittner, and W. Niichter, "Failure mechanisms of direct copper bonding substrates (DCB)," in Proc. 1st Electron. Syst. Integr. Technol. Conf., vol. 2. Dresden, Germany, Sep. 2006, pp. 714-718.
14. L. Dupont, Z. Khatir, S. Lefebvre, and S. Bontemps, "Effects of metallization thickness of ceramic substrates on the reliability of power assemblies under high temperature cycling," Microelectron. Rel., vol. 46, nos. 9-11, pp. 1766-1771, Sep.-Nov. 2006. (Pubitemid 44278090)
15. Y. Yoshino, H. Ohtsu, and T. Shibata, "Thermally induced failure of copper-bonded alumina substrates for electronic packaging," J. Amer. Ceramic Soc., vol. 75, no. 12, pp. 3353-3357, Dec. 1992.
16. J. Schulz-Harder, "Advantages and new development of direct bonded copper substrates," Microelectron. Rel., vol. 43, no. 3, pp. 359-365, Mar. 2003.
17. K. H. Dalal and J. F. Dickson, "Design trade-offs and reliability of power circuit substrates with respect to varying geometrical parameters of direct copper bonded Al2O3 and BeO," in Proc. Conf. Rec. IEEE Ind. Appl. Conf., vol. 1. Orlando, FL, Oct. 1995, pp. 923-929.
18. K. Easler, "Continued study in power module substrates for automotive harsh environments," in Proc. Ceramic Interconn. Technol. Conf., Denver, CO, Apr. 2003, pp. 69-72.
19. J. D. Scofield, J. N. Merrett, J. Richmond, A. Agarwal, and S. Lelsie, "Performance and reliability characteristics of 1200 V, 100 A, 200 °C half-bridge SiC MOSFET-JBS diode power modules," in Proc. IMAPS Int. Conf. High Temperat. Electron., Albuquerque, NM, May 2010, pp. 289-296.
20. T. G. Lei, J. N. Calata, K. D. T. Ngo, and G.-Q. Lu, "Effects of largetemperature cycling range on direct bond aluminum substrate," IEEE Trans. Device Mater. Rel., vol. 9, no. 4, pp. 563-568, Dec. 2009.
21. P. Zheng, A. Wiggins, R. W. Johnson, R. V. Frampton, S. J. Adam, and L. Peltz, "Die attach for high temperature electronics packaging," in Proc. Int. High Temperat. Electron. Conf., Albuquerque, NM, May 2008, pp. 1-6.