Low-loss high-performance base-drive unit for SiC BJTs

IEEE Transactions on Power Electronics

Volumn 27, Issue 5, 2012, Pages 2633-2643

  Rabkowski, Jacek ^a,b   Tolstoy, Georg ^a   Peftitsis, Dimosthenis ^a   Nee, Hans Peter ^a  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^b WARSAW UNIVERSITY OF TECHNOLOGY   (Poland)

Author keywords

base power consumption; Base driver circuit; dc dc power converters; Silicon carbide (SiC) BJT

Indexed keywords

BASE CURRENTS; BOOST CONVERTER; CONDUCTION STATE; DC-DC POWER CONVERTER; DOUBLE PULSE; DRIVE POWER; DUAL SOURCE; HIGH-VOLTAGES; LOW LOSS; LOW POWER; LOW-VOLTAGE SOURCES; OPERATING POINTS; POWER LOSS MEASUREMENT; SWITCHING PERFORMANCE; SWITCHING TIME;

BIPOLAR TRANSISTORS; CAPACITORS; PULSE CIRCUITS; SWITCHING FREQUENCY;

SILICON CARBIDE;

EID: 84858051217     PISSN: 08858993     EISSN: None     Source Type: Journal    
DOI: 10.1109/TPEL.2011.2171722     Document Type: Article

References (59)

1. I. W. Hofsajer, A. Melkonyan, M. Mantel, S. Round, and J. W. Kolar, "A simple, low cost gate drive method for practical use of SiC JFETs in SMPS," in Proc. Eur. Conf. Power Electron. Appl., 2005, p. 6.
2. P.-O. Jeannin, D. Frey, J.-C. Podvin, J.-P. Ferrieux, J. Barbaroux, J.-L. Schanen, and B. Rivet, "1MHz power factor correction boost converter with SiC Schottky diode," in Proc. 39th IAS Annu. Meet. Conf. Rec. IEEE Ind. Appl. Conf., Oct. 3-7, 2004, vol. 2, pp. 1267-1272. (Pubitemid 40016661)
3. R. L. Kelley, M. Mazzola, S. Morrison,W. Draper, I. Sankin, S. Sheridan, and J. Casady, "Power factor correction using an enhancement-mode SiC JFET," in Proc. IEEE Power Electron. Spec. Conf., Jun. 15-19, 2008, pp. 4766-4769.
4. K. Acharya, S. K. Mazumder, and P. Jedraszczak, "Efficient, hightemperature bidirectional Dc/Dc converter for plug-in-hybrid electric vehicle (PHEV) using SiC devices," in Proc. 24th Annu. IEEE Appl. Power Electron. Conf. Expo., Feb. 15-19, 2009, pp. 642-648.
5. H. Zhang, L. M. Tolbert, and B. Ozpineci, "Impact of SiC devices on hybrid electric and plug-in hybrid electric vehicles," in Proc. IEEE Ind. Appl. Soc. Annu. Meet., Oct. 5-9, 2008, pp. 1-5.
6. R. Kelley, M. S. Mazzola, and V. Bondarenko, "A scalable SiC device for DC/DC converters in future hybrid electric vehicles," in Proc. 21st Annu. IEEE Appl. Power Electron. Conf. Expo., Mar. 19-23, 2006, p. 4.
7. B. Wrzecionko, J. Biela, and J. W. Kolar, "SiC power semiconductors in HEVs: Influence of junction temperature on power density, chip utilization and efficiency," in Proc. 35th Annu. Conf. IEEE Ind. Electron., Nov. 3-5, 2009, pp. 3834-3841.
8. H.-R. Chang, E. Hanna, and A. V. Radun, "Development and demonstration of silicon carbide (SiC) motor drive inverter modules," in Proc. 34th Annu. IEEE Power Electron. Spec. Conf., Jun. 15-19, 2003, vol. 1, pp. 211-216.
9. D. Peftitsis, G. Tolstoy, A. Antonopoulos, J. Rabkowski, J.-K. Lim; M. Bakowski, L. Angquist, and H.-P. Nee, "High-power modular multilevel converters with SiC JFETs," in Proc. IEEE Energy Convers. Congr. Expo., Sep. 12-16, 2010, pp. 2148-2155.
10. M. Bakowski, "Status and prospects for SiC power devices," IEE Jpn. Trans. Ind. Appl., vol. 126, no. 4, pp. 391-399, 2006.
11. J. A. Carr, D. Hotz, J. C. Balda, H. A. Mantooth, A. Ong, and A. Agarwal, "Assessing the impact of SiC MOSFETs on converter interfaces for distributed energy resources," IEEE Trans. Power Electron., vol. 24, no. 1, pp. 260-270, Jan. 2009.
12. J.Wang, X. Zhou, J. Li, T. Zhao, A. Q. Huang, R. Callanan, F. Husna, and A. Agarwal, "10-kV SiC MOSFET-based boost converter," IEEE Trans. Ind. Appl., vol. 45, no. 6, pp. 2056-2063, Nov./Dec. 2009.
13. J. A. Cooper, Jr., M. R. Melloch, R. Singh, A. Agarwal, and J.W. Palmour, "Status and prospects for SiC power MOSFETs," IEEE Trans. Electron. Devices, vol. 49, no. 4, pp. 658-664, Apr. 2002. (Pubitemid 34491850)
14. P. Godignon, S. Berberich, E. Morvan, X. Jorda, D. Flores, J. Montserrat, J. Rebollo, and L. Ottaviani, "6H-SiC MOSFET structures for power device fabrication process characterization," in Proc. Int. Semicond. Conf., 1999, vol. 1, pp. 179-182. (Pubitemid 30524683)
15. 3 and SiC," IEEE Trans. Electron. Devices, vol. 55, no. 8, pp. 2041-2045, Aug. 2008.
16. P. Friedrichs and R. Rupp, "Silicon carbide power devices: Current developments and potential applications," in Proc. Eur. Conf. Power Electron. Appl., 2005, p. 11.
17. M. Treu, R. Rupp, P. Blaschitz, K. Ruschenschmidt, T. Sekinger, P. Friedrichs, R. Elpelt, and D. Peters, "Strategic considerations for unipolar SiC switch options: JFET vs. MOSFET," in Proc. 42nd IAS Annu. Meet. IEEE Ind. Appl. Conf., Sep. 23-27, 2007, pp. 324-330.
18. P. Friedrichs, H. Mitlehner, R. Schörner, K.-O. Dohnke, R. Elpelt, and D. Stephani, "The vertical silicon carbide JFET: A fast and low loss solid state power switching device," in Proc. Eur. Conf. Power Electron. Appl., 2001, pp. 1-6.
19. D. Aggeler, J. Biela, and J. W. Kolar, "A compact, high voltage 25 kW, 50 kHz DC-DC converter based on SiC JFETs," in Proc. 23rd Annu. IEEE Appl. Power Electron. Conf. Expo., Feb. 24-28, 2008, pp. 801-807.
20. B.Weis,M. Braun, and P. Friedrichs, "Turn-off and short circuit behaviour of 4H SiC JFETs," in Proc. Conf. Record 2001 IEEE 36th IAS Annu. Meet. Ind. Appl. Conf., Sep. 30-Oct. 4, 2001, vol. 1, pp. 365-369. (Pubitemid 33058382)
21. P. Friedrichs, "Silicon carbide power semiconductors: New opportunities for high efficiency," in Proc. 3rd IEEE Conf. Ind. Electron. Appl., Jun. 3-5, 2008, pp. 1770-1774.
22. B. Ållebrand, "On SiC JFET converters: Components, gate-drivers and main-circuit considerations," Ph.D. dissertation, KTH, Stockholm, Sweden, 2005.
23. B. Ållebrand and H.-P. Nee, "On the possibility to use SiC JFETs in power electronic circuits," in Proc. Eur. Conf. Power Electron. Appl., Aug. 2001, pp. 1-9.
24. T. Friedli, S. D. Round, and J. W. Kolar, "A 100 kHz SiC sparse matrix converter," in Proc. IEEE Power Electron. Spec. Conf., Jun. 17-21, 2007, pp. 2148-2154.
25. J. Callaway, Y. Wang, R. Burgos, T. P. Chow, F. Wang, and D. Boroyevich, "Evaluation of SiC JFETs for a three-phase current-source rectifier with high switching frequency," in Proc. 22nd Annu. IEEE Appl. Power Electron. Conf., 2007, pp. 345-351.
26. R. Lai, F. Wang, P. Ning, D. Zhang, D. Jiang, R. Burgos, D. Boroyevich, K. J. Karimi, and V. D. Immanuel, "Development of a 10kW high power density three-phase ac-dc-ac converter using SiC devices," presented at the Proc. Eur. Conf. Power Electron. Appl., Barcelona, Spain, 2009.
27. T. Friedli, S. D. Round, D. Hassler, and J. W. Kolar, "Design and performance of a 200-kHz all-SiC JFET current DC-link back-to-back converter," IEEE Trans. Ind. Appl., vol. 45, no. 5, pp. 1868-1878, Sep./Oct. 2009.
28. J. Rabkowski and R. Barlik, "Three-phase grid inverter with SIC JFETs and Schottky diodes," in Proc. 16th Int. Conf. Mixed Design Integr. Circuits Syst., 2009, pp. 181-184.
29. D. Aggeler, J. Biela, and J.W. Kolar, "Controllable d?/dt behaviour of the SiC MOSFET/JFET cascode an alternative hard commutated switch for telecom applications," in Proc. 25th Annu. IEEE Appl. Power Electron. Conf. Expo., 2010, pp. 1584-1590.
30. G. Tolstoy, D. Peftitsis, J. Rabkowski, and H.-P. Nee, "Performance tests of 4,1×4,1mm2 SiC JFET for DC/DC boost converter application," presented at the Proc. Eur. Conf. Silicon Carbide Related Mater., Oslo, Norway, Aug. 29-Sep. 2, 2010.
31. H.-S. Lee, M. Domeij, C.-M. Zetterling, R. Ghandi, M. Ostling, F. Allerstam, and E. O. Sveinbjornsson, "1200V 4H-SiC BJTs with a common emitter current gain of 60 and low on-resistance," presented at the Proc. Int. Conf. SiC Related Mater., Lake Biwa Resort, Otsu, Japan, Oct. 14-19, 2007.
32. W. T. Franke and F. W. Fuchs, "Comparison of switching and conducting performance of SiC-JFET and SiC-BJT with a state of the art IGBT," presented at the Proc. Eur. Conf. Power Electron. Appl., Barcelona, Spain, 2009.
33. J.-K. Lim, G. Tolstoy, D. Peftitsis, J. Rabkowski, M. Bakowski, and H.-P. Nee, "Comparison of total losses of 1.2kV SiC JFET and BJT in DC-DC converter including gate driver," presented at the Proc. Eur. Conf. Silicon Carbide Related Mater., Oslo, Norway, Aug. 29-Sep. 2, 2010.
34. W. V. Muench, P. Hoeck, and E. Pettenpaul, "Silicon carbide field-effect and bipolar transistors," in Proc. Int. Electron. Devices Meet., 1977, vol. 23, pp. 337-339.
35. Y. Luo, L. Fursin, and J. H. Zhao, "Demonstration of 4H-SiC power bipolar junction transistors," Electron. Lett., vol. 36, no. 17, pp. 1496-1497, Aug. 2000.
36. Y. Tang, J. B. Fedison, and T. P. Chow, "High-Voltage implanted-emitter 4H-SiC BJTs," IEEE Trans. Electron. Devices, vol. 23, no. 1, pp. 16-18, Jan. 2002. (Pubitemid 34138830)
37. Y. Gao, A. Q. Huang, S. Krishnaswami, J. Richmond, and A. K. Agarwal, "Comparison of static and switching characteristics of 1200V4H-SiCBJT and 1200VSi-IGBT," IEEE Trans. Ind. Appl., vol. 44, no. 3, pp. 887-893, May/Jun. 2008. (Pubitemid 351796135)
38. Q. Zhang, A. Burk, F. Husna, R. Callanan, A. Agarwal, J. Palmour, R. Stahlbush, and C. Scozzie, "4H-SiC bipolar junction transistors: From research to development: A case study: 1200V, 20 A, stable SiC BJTs with high blocking yield," in Proc. 21st Int. Symp. Power Semicond. Devices & IC's, 2009, pp. 339-342.
39. M. Domeij, C. Zaring, A. O. Konstantinov, M. Nawaz, J.-O. Svedberg, K. Gumaelius, I. Keri, A. Lindgren, B. Hammarlund, M. Östling, and M. Reimark, "2.2 kV SiC BJTs with low Vcesat fast switching and shortcircuit capability," presented at the Proc. Int. Conf. SiC Related Mater., Nuremberg, Germany, Oct. 11-16, 2009.
40. M. Chinthavali, P. Ning, Y. Cui, and L. M. Tolbert, "Investigation on the parallel operation of discrete SiC BJTs and JFETs," in Proc. 26th Annu. IEEE Appl. Power Electron. Conf. Expo.,Mar. 6-11, 2011, pp. 1076-1083.
41. H.W. van der Broeck, J. D. vanWyk, and J. J. Schoeman, "On the steadystate and dynamic characteristics of bipolar transistor power switches in low-loss technology," IEE Proc. Elect. Power Appl. B, vol. 132, no. 5, pp. 251-259, Sep. 1985. (Pubitemid 15559258)
42. B.W.Williams, "High-voltage high-frequency power-switching transistor module with switching-aid-circuit energy recovery," IEE Proc. Electr. Power Appl. B, vol. 131, no. 1, p. 7, Jan. 1984.
43. J. A. Ferreira and J. D. van Wyk, "Transistor inverter optimization employing self-oscillation for low cost and simplicity," in Proc. IEEE Ind. Appl. Soc. Annu. Meet., Oct. 2-7, 1988, vol. 1, pp. 965-971.
44. J. D. VanWyk and J. A. Ferreira, "Transistor inverter design optimization in the frequency range above 5 kHz up to 50 kVA," IEEE Trans. Ind. Appl., vol. IA-19, no. 2, pp. 296-302, Mar. 1983.
45. N. Mohan, T. M. Undeland, and W. P. Robbins, Power Electronics: Converters, Applications, and Design. Hoboken, NJ: Wiley, 2003.
46. R. B. Prest and J. D. Van Wyk, "Pulsed transformer base drives for highefficiency high-current low-voltage switches," IEEE Trans. Power Electron., vol. 3, no. 2, pp. 137-146, Apr. 1988.
47. P. H. Swanepoel, J. D. van Wyk, and J. J. Schoeman, " Transformercoupled direct base drive technology for high-power, high-voltage, bipolar transistor PWM converters," IEEE Trans. Ind. Appl., vol. 25, no. 6, pp. 1158-1166, Nov./Dec. 1989.
48. J. Ch. Bendien, G. Fregien, and J. D. vanWyk, "High-efficiency on-board battery charger with transformer isolation, sinusoidal input current and maximum power factor," IEE Proc. Electr. Power Appl. B, vol. 133, no. 4, pp. 197-204, Jul. 1986. (Pubitemid 16591938)
49. J. D. van Wyk, P. H. Swanepoel, and J. J. Schoeman, "Megahertz direct base drives for high power converters with high voltage bipolar power transistors," in Proc. 3rd Int. Conf. Power Electron. Variable-Speed Drives, Jul. 13-15, 1988, pp. 13-16.
50. J. H. R. Enslin and S. J. B. Hartman, "A novel isolated, compensated Darlington based-drive configuration," in Proc. IEEE Ind. Appl. Soc. Annu. Meet., Sep. 28-Oct. 4,, 1991, vol. 1, pp. 939-945.
51. J. M. Joyce and J. E. Kress, "Power transistor switching with a controlled regenerative current mode transformer," in Proc. IEEE Power Electron. Spec. Conf., 1977, p. 148.
52. R. L.Avant, D. J. Shortt, G. E.West, and R. E. Palma, "A proportional drive for discontinuous mode DC-to-DC converters," in Proc. Int. Telecommun. Energy Conf., Nov. 4-7, 1984, pp. 352-358.
53. L. D. Varga and N. A. Losic, "Design of a high-performance floating power BJT driver with proportional base drive," in Proc. IEEE Ind. Appl. Soc. Annu. Meet., Oct. 1-5, 1989, vol. 1, pp. 1186-1189.
54. P. H. Swanepoel, J. W. van Wyk, and J. J. Schoeman, " Transformercoupled direct base drive technology for high-power, high-voltage, bipolar transistor PWM converters," IEEE Trans. Ind. Appl., vol. 25, no. 6, pp. 1158-1166, Nov./Dec. 1989.
55. J. H. R. Enslin and S. J. B. Hartman, "A novel isolated, compensated Darlington based-drive configuration," in Proc. IEEE Ind. Appl. Soc.Annu. Meet., 1991, vol. 1, pp. 939-945.
56. I. Takahashi, J. Itoh, and G. J. Su, "Toward 99% efficiency for transistor inverters," IEEE Ind. Appl. Mag., vol. 2, no. 6, pp. 39-46, Nov./Dec. 1996.
57. BitSiC1206BB-P1 rev. B Preliminary Datasheet, TranSiC, Newark, NJ.
58. Driving circuit and switching, TranSiC, Newark, NJ, Appl. Note TSCTR003.
59. R. Kelley, A. Ritenour, D. Sheridan, and J. Casady, "Improved two-stage DC-coupled gate driver for enhancement-mode SiC JFET," in Proc. 25th Annu. IEEE Appl. Power Electron. Conf. Expo., 2010, pp. 1838-1841.