Normally-off SiC VJFETs for 800 V and 1200 V power switching applications

Proceedings of the International Symposium on Power Semiconductor Devices and ICs

Volumn , Issue , 2008, Pages 260-262

  Sankin, I ^a   Sheridan, D C ^a   Draper, W ^a   Bondarenko, V ^a   Kelley, R ^a   Mazzola, M S ^a   Casady, J B ^a  

^a SemiSouth Laboratories Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER NETWORKS; ELECTRIC CONDUCTIVITY; POWER ELECTRONICS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR MATERIALS; SEMICONDUCTOR SWITCHES; SHAPE MEMORY EFFECT; SILICON CARBIDE;

INTERNATIONAL SYMPOSIUM; POWER SEMICONDUCTOR DEVICES; SPECIFIC ON-RESISTANCE;

SEMICONDUCTOR DEVICES;

EID: 51549103671     PISSN: 10636854     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISPSD.2008.4538948     Document Type: Conference Paper

References (5)

1. 2, 1726V 4H-SiC normally-off trenched-and-implanted vertical JFETs and circuit applications," IEE Proc.-Circuits Devices Syst., Vol. 151, No. 3, pp. 231-237, June 2004
2. R.K. Malhan et al., "Switching performance of epitaxially grown normally-off 4H-SiC JFET," ICSCRM2007, Abstract Th-P-85.
3. K. Ishikawa et al., "Normally-off SiC-JFET inverter with low- voltage control and a high-speed drive circuit," Proc. of the 19th Int. Symp. on Pwr. Semiconductor Devices & ICs , pp. 217-220, May 2007
4. J.N. Merrett et al., "RF and DC characterization of self-aligned L-band 4H-SiC static induction transistors," Mater. Sci. Forum, 2006, vol.527-529, pt.2, pp. 1223-6
5. 2, high current 4H-SiC VJFETs for high power and high temperature applications," Mat. Sci. Forum, 2006, vols. 527-529, pt.2, pp. 1183-1186