A physics-based model for a SiC JFET accounting for electric-field- dependent mobility

IEEE Transactions on Industry Applications

Volumn 47, Issue 1, 2011, Pages 199-211

  Platania, Elisa ^a   Chen, Zhiyang ^c   Chimento, Filippo ^a   Grekov, Alexander E ^c   Fu, Ruiyun ^c   Lu, Liqing ^c   Raciti, Angelo ^a   Hudgins, Jerry L ^b   Mantooth, H Alan ^d   Sheridan, David C ^e   Casady, J ^e   Santi, Enrico ^c  

^a UNIVERSITY OF CATANIA   (Italy)

^b UNIVERSITY OF NEBRASKA LINCOLN   (United States)

^c University of South Carolina   (United States)

^d UNIVERSITY OF ARKANSAS   (United States)

^e SemiSouth Laboratories Inc   (United States)

Author keywords

Field dependent mobility; junction field effect transistor (JFET); physics based model; silicon carbide (SiC)

Indexed keywords

CONDUCTION CURRENT; DRIFT VELOCITIES; FIELD-DEPENDENT MOBILITY; HIGH-CURRENT; INDUCTIVE SWITCHING; JUNCTION FIELD EFFECT TRANSISTORS; MODEL EQUATIONS; PHYSICAL MODEL; PHYSICS-BASED MODEL; PHYSICS-BASED MODELS; STATIC AND DYNAMIC; STATIC CONDITIONS;

COMPUTER SIMULATION; ELECTRIC FIELDS; SILICON CARBIDE;

FIELD EFFECT TRANSISTORS;

EID: 78751664924     PISSN: 00939994     EISSN: None     Source Type: Journal    
DOI: 10.1109/TIA.2010.2090843     Document Type: Article

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