Characterization of a high temperature multichip SiC JFET-based module

IEEE Energy Conversion Congress and Exposition: Energy Conversion Innovation for a Clean Energy Future, ECCE 2011, Proceedings

Volumn , Issue , 2011, Pages 2405-2412

  Xu, Fan ^a   Jiang, Dong ^a   Wang, Jing ^a   Wang, Fred ^a   Tolbert, Leon M ^a   Han, Timothy J ^b   Kim, Sung Joon ^b  

^a University of Tennessee   (United States)

^b Global Power Electronics   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT UNBALANCE; DC-BUS VOLTAGES; DOUBLE PULSE; DYNAMIC PERFORMANCE; ELECTRICAL PERFORMANCE; GATE RESISTANCE; HIGH TEMPERATURE; MULTI-CHIP; ON-STATE RESISTANCE; PACKAGE PARASITICS; SHOOT-THROUGH; SHOTTKY BARRIER; STATIC CHARACTERISTIC; SUBSTRATE LAYOUT; SWITCHING ELEMENTS; SWITCHING LOSS; THREE-PHASE INVERTER;

DRAIN CURRENT; ENERGY CONVERSION; RATING; SILICON CARBIDE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 81855206653     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ECCE.2011.6064088     Document Type: Conference Paper

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