Silicon carbide power transistors: A new era in power electronics is initiated

IEEE Industrial Electronics Magazine

Volumn 6, Issue 2, 2012, Pages 17-26

  Ra̧bkowski, Jacek ^a   Peftitsis, Dimosthenis ^a   Nee, Hans Peter ^a  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

APPLICATION AREA; FUTURE TECHNOLOGIES; HIGH FREQUENCY HF; HIGH QUALITY; LOWER VOLTAGE DROP; MAXIMUM TEMPERATURE; NEW PRODUCT; POWER TRANSISTORS; VOLTAGE RATINGS;

SILICON CARBIDE; THERMAL CONDUCTIVITY;

POWER ELECTRONICS;

EID: 84862658720     PISSN: 19324529     EISSN: None     Source Type: Journal    
DOI: 10.1109/MIE.2012.2193291     Document Type: Article

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