SiC power devices - Present status, applications and future perspective

Proceedings of the International Symposium on Power Semiconductor Devices and ICs

Volumn , Issue , 2011, Pages 10-15

  Ostling, Mikael ^a   Ghandi, Reza ^a   Zetterling, Carl Mikael ^a  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

CRITICAL ELECTRIC FIELD; CRITICAL FIELD STRENGTH; FUTURE PERSPECTIVES; HIGH POWER APPLICATIONS; REAL APPLICATIONS; SILICON CARBIDES (SIC); SILICON-BASED DEVICES; WIDE-BAND-GAP SEMICONDUCTOR;

ELECTRIC EQUIPMENT; FIELD EFFECT TRANSISTORS; GALLIUM NITRIDE; HIGH TEMPERATURE APPLICATIONS; HIGH TEMPERATURE OPERATIONS; SCHOTTKY BARRIER DIODES; SILICON WAFERS; SWITCHING;

SILICON CARBIDE;

EID: 84880731411     PISSN: 10636854     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISPSD.2011.5890778     Document Type: Conference Paper

References (31)

1. C.-M. Zetterling, Ed.,"Process technology for silicon carbide devices," in EMIS processing series, IEE, 2002.
2. M. Östling, S.-M. Koo, M. Domeij, E. Danielsson, and C.-M. Zetterling, "SiC Device Technologies," in Encyclopedia of RF and Microwave Engineering: John Wiley & Sons, Inc., 2005, pp. 4613-4619
3. M. Östling et al "SiC Bipolar Power Transistors-Design and Technology Issues for Ultimate Performance" in Silicon Carbide 2010-Materials, Processing, and Devices, edited by S.E. Saddow, E. Sanchez, F. Zhao, M. Dudley (Mater. Res. Soc. Symp. Proc. Volume 1246, Warrendale, PA, 2010, B08-01
4. R. Ghandi, H-S. Lee, M. Domeij, B. Buono, C-M. Zetterling, and M. Östling, IEEE Electron Device Letters, vol. 29, no. 10 (2008) pp.1135 1137.
5. B. A. Hull, C. Jonas, S-H Ryu, M. Das, M. O'Loughlin, F. Husna, R. Callanan, J. Richmond, A. Agarwal, J. Palmour and C. Scozzie, Materials Science Forum Vols. 615-617 (2009) pp. 749-752.
6. T. Kimoto, "SiC technologies for future energy electronics," VLSI Technology (VLSIT), 2010 Symposium on, pp. 9-14, 2010.
7. D.C. Sheridan, A. Ritenour, V. Bondarenko, P. Burks, and J.B. Casady, Proceeding of 21st International Symposium on Power Semiconductor Devices & IC's, (2009) pp. 335-338.
8. M. Domeij, C. Zaring, A.O. Konstantinov, M. Nawaz, J-O. Svedberg, K. Gumaelius, I. Keri, A.Lindgren, B. Hammarlund, M. Östling, M. Reimark, Materials Science Forum Vols. 645-648 (2010) pp 1033-1036.
9. R. Ghandi, H-S. Lee, M. Domeij, B. Buono, C-M. Zetterling, and M.Östling, IEEE Electron Device Letters, vol. 29, no. 10 (2008) pp.1135-1137.
10. H. O'Brien, A. Ogunniyi, Q. Jon Zhang, and A. K. Agarwal, in Silicon Carbide 2010-Materials, Processing, and Devices, edited by S.E. Saddow, E. Sanchez, F. Zhao, M. Dudley (Mater. Res. Soc. Symp. Proc. Volume 1246, Warrendale, PA, 2010, B08-03
11. N.-Q. Zhang, B. Moran, S. P. DenBaars, U. K. Mishra, X. W. Wang, and T. P. Ma, "Kilovolt AlGaN/GaN HEMTs as switching devices," Phys.Stat. Sol. A, vol. 188, no. 1, pp. 213-217, Nov. 16, 2001.
12. X. Huili, Y. Dora, A. Chini, S. Heikman, S. Keller, and U. K. Mishra, "High breakdown voltage AlGaN-GaN HEMTs achieved by multiple field plates," IEEE Electron Device Lett., vol. 25, no. 4, pp. 161-163, Apr. 2004.
13. Y. Uemoto, D. Shibata, M. Yanagihara, H. Ishida, H. Matsuo, S. Nagai, N. Batta, L. Ming, T. Ueda, T. Tanaka, and D. Ueda, "8300 V blocking voltage AlGaN/GaN power HFET with thick poly-AlN passivation," in IEDM Tech. Dig., Dec. 10-12, 2007, pp. 861-864.
14. S. Yagi, M. Shimizu, H. Okumura, H. Ohashi, Y. Yano, and N. Akutsu, "High breakdown voltage AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistor with TiO2/SiN gate insulator," Jpn. J. Appl. Phys., vol. 46, no. 4B, pp. 2309-2311, Apr. 2007.
15. Y. Dora, A. Chakraborty, L. McCarthy, S. Keller, S. P. DenBaars, and U. K. Mishra, "High breakdown voltage achieved on AlGaN/GaN HEMTs with integrated slant field plates," IEEE Electron Device Lett., vol. 27, no. 9, pp. 713-715, Sep. 2006.
16. N. Tipirneni, A. Koudymov, V. Adivarahan, J. Yang, G. Simin, and M. A. Khan, "The 1.6-kV AlGaN/GaN HFETs," IEEE Electron Device Lett., vol. 27, no. 9, pp. 716-718, Sep. 2006.
17. Y. Uemoto, T. Ueda, T. Tanaka, and D. Ueda, "Recent advances of high voltage AlGaN/GaN power HFETs," in Proc. SPIE Gallium Nitride Mater. Devices IV, H. Morkoc, C. W. Litton, J. I. Chyi, Y. Nanishi, J. Piprek, and E. Yoon, Eds., San Jose, CA, 2009, vol. 7216, pp. 721 606-721 611.
18. B. Lu, E.L. Piner, T. Palacios, "Schottky-Drain Technology for AlGaN/GaN High-Electron Mobility Transistors" IEEE Electron Device Lett., vol. 31, no. 4, pp. 302-304, Apr. 2010.
19. K.-Y. Wong, W. Chen, and K. J. Chen, "Wide Bandgap GaN Smart Power Chip Technology" CS MANTECH Conference, May 18th-21st, 2009, Tampa, Florida, USA
20. W.-T. Franke and F.W Fuchs, 13th European Conference on Power Electronics Power Electronics and Applications, 2009. EPE '09. (p. 1-10)
21. Bruno Burger, Dirk Kranzer, "Extreme High Efficiency PV-Power Converters," EPE, Barcelona, Spain, 8-10 September 2009
22. M. Östling, Silicon Carbide Power Devices, IEDM Tech. Dig. p.316-319, San Francisco, December 2010 and www.transic.com
23. D. Urciuoli, R. Green, A. Lelis, D. Ibitayo, "Performance of a dual, 1200 V, 400 A, silicon-carbide power MOSFET module," Energy Conversion Congress and Exposition (ECCE), 2010 IEEE, pp.3303-3310, 12-16 Sept. 2010
24. A. Lostetter, J. Hornberger, B. McPherson, B. Reese, R. Shaw, M. Schupbach, B. Rowden, A. Mantooth, J. Balda, T. Otsuka, K. Okumura, M. Miura, Vehicle Power and Propulsion Conference, 2009. VPPC '09. IEEE, pp.1032-1035, 7-10 Sept. 2009
25. L. Stevanovic, K. Matocha, Z. Stum, P. Losee, A. Gowda, J. Glaser, R. Beaupre, Control and Modeling for Power Electronics (COMPEL), 2010 IEEE 12th Workshop on, pp.1-6, 28-30 June 2010
26. J. Richmond, S. Leslie, B. Hull, M. Das, A. Agarwal, J. Palmour, Energy Conversion Congress and Exposition, 2009. ECCE 2009. IEEE, pp.106-111, 20-24 Sept. 2009
27. K. Matocha, P. A. Losee, A. Gowda, El. Delgado, G. Dunne, R. Beaupre, L. Stevanovic, Materials Science Forum Vols. 645-648 (2010) pp 1123-1126
28. D. Sheridan, at the European SiC and Related Materials Conference, 2010, Oslo, Norway.
29. H. Zhang; L. M. Tolbert.; Industrial Electronics, IEEE Transactions on, vol.58, no.1, pp.21-28, Jan. 2011.
30. M. Nawaz, C. Zaring, S. Onoda, T. Ohshima and M. Östling, Proceedings of 67th Device Research Conference, The Pennsylvania State University, University Park, PA, June 22-24 2009, p. 279-280
31. A. Hallén, M. Nawaz, C. Zaring, M. Usman, M. Domeij, and M. Östling, IEEE Electron Device Letters, Vol 31 (2010) p. 707-709