Development of a SiC JFET-based six-pack power module for a fully integrated inverter

IEEE Transactions on Power Electronics

Volumn 28, Issue 3, 2013, Pages 1464-1478

  Xu, Fan ^a   Han, Timothy J ^b   Jiang, Dong ^c   Tolbert, Leon M ^a   Wang, Fei ^a   Nagashima, Jim ^b   Kim, Sung Joon ^b   Kulkarni, Srikanth ^d   Barlow, Fred ^e  

^a University of Tennessee   (United States)

^b Global Power Electronics Inc   (United States)

^c UNITED TECHNOLOGIES RESEARCH CENTER   (United States)

^d MICRON TECHNOLOGY INC   (United States)

^e UNIVERSITY OF IDAHO   (United States)

Author keywords

Electric vehicle and hybrid electric vehicle (EV HEV); SiC junction gate field effect transistor (JFET); silicon carbide (SiC) inverter; six pack power module

Indexed keywords

ASSEMBLY PROCESS; COOLANT TEMPERATURE; FULLY INTEGRATED; INTERNAL CAPACITANCE; JUNCTION GATES; JUNCTION TEMPERATURES; ON-STATE RESISTANCE; OUTPUT POWER; PARASITIC INDUCTANCES; POWER MODULE; SHOOT-THROUGH; STATIC CHARACTERISTIC; SWITCHING ELEMENTS; SWITCHING LOSS; SWITCHING PERFORMANCE; TEMPERATURE CHANGES; TEMPERATURE RANGE; TEST SETUPS; THERMAL SHOCK TESTS; THREE-PHASE INVERTER;

CONVERSION EFFICIENCY; ELECTRIC POWER SYSTEMS; ELECTRIC VEHICLES; HYBRID VEHICLES; JUNCTION GATE FIELD EFFECT TRANSISTORS; SCHOTTKY BARRIER DIODES; SECONDARY BATTERIES;

SILICON CARBIDE;

EID: 84867796658     PISSN: 08858993     EISSN: None     Source Type: Journal    
DOI: 10.1109/TPEL.2012.2205946     Document Type: Article

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