Investigation on the parallel operation of discrete SiC BJTs and JFETs

Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC

Volumn , Issue , 2011, Pages 1076-1083

  Chinthavali, Madhu ^a   Ning, Puqi ^b   Cui, Yutian ^c   Tolbert, Leon M ^a,c  

^a OAK RIDGE NATIONAL LABORATORY   (United States)

^b OAK RIDGE INSTITUTE FOR SCIENCE AND EDUCATION   (United States)

^c UNIVERSITY OF TENNESSEE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT GAINS; DEVICE PARAMETERS; DYNAMIC CURRENT; ENERGY LOSS; GATE DRIVERS; ON-RESISTANCE; PARALLEL OPERATIONS; STATIC AND DYNAMIC; STATIC PARAMETERS; SWITCHING SPEED; SWITCHING TRANSIENT; TRANSIENT BEHAVIOR;

ENERGY DISSIPATION; LEAKAGE CURRENTS; POWER ELECTRONICS; POWER QUALITY; SILICON CARBIDE; TRANSIENTS;

EQUIPMENT;

EID: 79955767125     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/APEC.2011.5744728     Document Type: Conference Paper

References (15)

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