Robustness of SiC JFET in short-circuit modes

IEEE Electron Device Letters

Volumn 30, Issue 1, 2009, Pages 51-53

  Boughrara, Narjes ^a,b   Moumen, Sabrine ^a,c   Lefebvre, Stéphane ^b,d   Khatir, Zoubir ^c   Friedrichs, Peter ^e   Faugieres, Jean Claude ^b,d  

^a Centre National de la Recherche Scientifique   (France)

^b UNIVERSITY OF SKIKDA   (Algeria)

^c logistique et organisation des transports   (France)

^d University of Paris Cité   (France)

^e SiCED Electronics Development GmbH and Co KG   (Germany)

Author keywords

JFETs; Short circuit current; Silicon carbide

Indexed keywords

MOSFET DEVICES; SHORT CIRCUIT CURRENTS; SILICON CARBIDE; TIMING CIRCUITS;

APPROPRIATE MODELS; CIRCUIT OPERATION; CRYSTAL TEMPERATURES; CURRENT LIMITATION; ELECTRICAL CHARACTERIZATION; SATURATION CURRENT; SHORT CIRCUIT MODE; SI DEVICES;

JUNCTION GATE FIELD EFFECT TRANSISTORS;

EID: 58149528225     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2008.2008668     Document Type: Article

References (8)

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