Investigation of Si IGBT operation at 200°C for traction application

IEEE Energy Conversion Congress and Exposition: Energy Conversion Innovation for a Clean Energy Future, ECCE 2011, Proceedings

Volumn , Issue , 2011, Pages 2397-2404

  Xu, Zhuxian ^a   Li, Ming ^b   Wang, Fred ^a,c   Liang, Zhenxian ^c  

^a University of Tennessee   (United States)

^b UNITED TECHNOLOGIES RESEARCH CENTER   (United States)

^c OAK RIDGE NATIONAL LABORATORY   (United States)

Author keywords

high temperature characteristics; safe operating area; traction application; Trench gate field stop silicon IGBT

Indexed keywords

COOLING DESIGNS; DEVICE CHARACTERIZATION; DEVICE FORWARD CONDUCTION CHARACTERISTICS; FAILURE MECHANISM; HIGH DENSITY; HIGH TEMPERATURE; HIGH TEMPERATURE CHARACTERISTICS; HYBRID VEHICLES; RELIABLE OPERATION; SAFE OPERATING AREA; SHORT-CIRCUIT FAULT; SWITCHING PERFORMANCE; SYSTEMATIC STUDY; THERMAL CONDITION; THERMAL STUDY; TRACTION APPLICATION; TRACTION APPLICATIONS;

ENERGY CONVERSION; TRACTION (FRICTION);

SILICON;

EID: 81855173625     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ECCE.2011.6064087     Document Type: Conference Paper

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