Demonstration of the first SiC power integrated circuit

Solid-State Electronics

Volumn 52, Issue 10, 2008, Pages 1636-1646

  Sheng, Kuang ^a   Zhang, Yongxi ^a   Su, Ming ^a   Zhao, Jian H ^a   Li, Xueqing ^b   Alexandrov, Petre ^b   Fursin, Leonid ^b  

^a RUTGERS UNIVERSITY   (United States)

^b UNITED SILICON CARBIDE INC   (United States)

Author keywords

High temperature electronics; Junction field effect transistor (JFET); Normally off; Power integrated circuits; RESURF; Silicon carbide

Indexed keywords

ELECTRONICS INDUSTRY; INTEGRATED CIRCUITS; OPTICAL DESIGN; SILICON CARBIDE; TRANSISTORS;

DC-DC POWER CONVERTERS; HIGH FREQUENCIES; HIGH TEMPERATURE ELECTRONICS; JUNCTION FIELD-EFFECT TRANSISTOR (JFET); NEW RESULTS; NORMALLY OFF; POWER INTEGRATED CIRCUITS; RESURF;

FIELD EFFECT TRANSISTORS;

EID: 50849140800     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2008.06.037     Document Type: Article

References (13)

1. Friedrichs P., Mitlehner H., Kaltschmidt R., Weinert U., Bartsch W., Hecht C., et al. Static and dynamic characteristics of 4H-SiC JFETs designed for different blocking categories. Mater Sci Forum 338-42 (2000) 1243-1246
2. Zhao J.H., Li X., Tone K., Alexandrov P., Pan M., and Weiner M. A novel high-voltage normally-off 4H-SiC vertical JFET. Mater Sci Forum 389-93 (2002) 1223-1226
3. Friedrichs P., Mitlehner H., Schörner R., Dohnke K.O., Elpelt R., and Stephani D. Application-oriented unipolar switching SiC devices. Mater Sci Forum 389-93 (2002) 1185-1190
4. Gupta R.N., Chang H.R., Hanna E., and Bui C. A 600 V SiC trench JFET. Mater Sci Forum 389-93 (2002) 1219-1222
5. 2. Proc ISPSD (2002) 61-64
6. 2 4H-SiC trenched and implanted vertical junction field effect transistors. IEEE Electron Dev Lett 24 2 (2003) 81-83
7. Sheng K., and Hu S. Design criteria of high-voltage lateral RESURF JFETs on 4H-SiC. IEEE Trans Electron Dev 52 10 (2005) 2300-2308
8. Li Y. PhD thesis of rutgers; 2007.
9. Tone K., Zhao J.H., Fursin L., Alexandrov P., and Weiner M. 4H-SiC normally off vertical junction field-effect transistor with high current density. IEEE Electron Dev Lett 24 7 (2003) 463-465
10. 2 normally-off 4H-SiC lateral JFET. IEEE Electron Dev Lett 27 10 (2006) 834-836
11. 2 Normally off 4H-SiC lateral RESURF JFET for power integrated circuit applications. IEEE Electron Dev Lett 28 5 (2007) 404-407
12. Zhang Y, Sheng K, Su M, Zhao JH, Alexandrov P, Fursin L. Development of high temperature lateral HV and LV JFETs in 4H-SiC. Mater Sci Forum, in press.
13. Bai J.G., Zhang Z.Z., Calata J.N., and Lu G.Q. Low-temperature sintered nanoscale silver as a novel semiconductor device-metallized substrate interconnect materia. IEEE Trans Comp Pack Tech 29 3 (2006) 589-593