Maximum junction temperatures of SiC power devices

IEEE Transactions on Electron Devices

Volumn 56, Issue 2, 2009, Pages 337-342

  Sheng, Kuang ^a  

^a RUTGERS UNIVERSITY   (United States)

Author keywords

BJT; High temperature; JFET; MOSFET; Power device; Schottky barrier diodes (SBD); SiC

Indexed keywords

BIPOLAR TRANSISTORS; ELECTRIC EQUIPMENT; MOSFET DEVICES; SCHOTTKY BARRIER DIODES; SILICON CARBIDE;

BJT; HIGH TEMPERATURE; JFET; MOSFET; POWER DEVICE; SCHOTTKY BARRIER DIODES (SBD); SIC;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 59849115195     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2008.2010605     Document Type: Article

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