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International Conference and Exhibition on High Temperature Electronics 2010, HiTEC 2010

Volumn , Issue , 2010, Pages 297-304

High temperature (250 °C) silicon carbide power modules with integrated gate drive boards

(12) Reese, B a McPherson, B a Shaw, R a Hornberger, J a Schupbach, R a Lostetter, A a Rowden, B b Mantooth, A b Ang, S b Balda, J b Okumura, K c Otsuka, T c

a Arkansas Power Electronics International Inc (United States)

b UNIVERSITY OF ARKANSAS (United States)

c ROHM CO LTD (Japan)

Author keywords

High temperature electronics; High temperature packaging; Silicon carbide (SiC); Silicon on insulator (SOI)

Indexed keywords

GATE DRIVERS; HIGH TEMPERATURE; HIGH-TEMPERATURE ELECTRONICS; HIGH-TEMPERATURE PACKAGING; POWER MODULE; SILICON CARBIDES (SIC); SILICON-ON- INSULATORS (SOI); THERMAL PERFORMANCE;

POWER ELECTRONICS; SILICON;

SILICON CARBIDE;

EID: 80052099773 PISSN: None EISSN: None Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper

Times cited : (8)

References (5)

1
- 72149089203
- Packaging of high temperature 50 kW SiC motor drive modules for hybrid-electric vehicles
- San Jose, CA, November 2009
- B. McPherson, J. Hornberger, J. Bourne, A. Lostetter, R. Schupbach, R. Shaw, B. Reese, B. Rowden, K. Okumura, T. Otsuka, A. Mantooth, S. Ang, J. Balda, "Packaging of High Temperature 50 kW SiC Motor Drive Modules for Hybrid-Electric Vehicles,", IMAPS 2009, Pages 663-670 San Jose, CA, November 2009.
- (2009) IMAPS , pp. 663-670
- McPherson, B.¹ Hornberger, J.² Bourne, J.³ Lostetter, A.⁴ Schupbach, R.⁵ Shaw, R.⁶ Reese, B.⁷ Rowden, B.⁸ Okumura, K.⁹ Otsuka, T.¹⁰ Mantooth, A.¹¹ Ang, S.¹² Balda, J.¹³

2
- 72149112455
- High-temperature silicon carbide and silicon on insulator based integrated power modules
- Dearborn, Michigan, September 7-11
- A. Lostetter, J. Hornberger, B. McPherson, B. Reese, R. Shaw, M. Schupbach, B. Rowden, A. Mantooth, J. Balda, T. Otsuka, K. Okumura, and M. Miura, "High-Temperature Silicon Carbide and Silicon on Insulator Based Integrated Power Modules,", 2009 IEEE Vehicle Power and Propulsion Conference, Dearborn, Michigan, September 7-11, 2009.
- (2009) 2009 IEEE Vehicle Power and Propulsion Conference
- Lostetter, A.¹ Hornberger, J.² McPherson, B.³ Reese, B.⁴ Shaw, R.⁵ Schupbach, M.⁶ Rowden, B.⁷ Mantooth, A.⁸ Balda, J.⁹ Otsuka, T.¹⁰ Okumura, K.¹¹ Miura, M.¹²

3
- 48349095781
- A fully integrated 300°C, 4 kW, 3-phase, SiC motor drive module
- J.M. Hornbger, E. Cilio, B. McPherson, R.M. Schupbach, A.B. Lostetter, H.A. Mantooth, "A Fully Integrated 300°C, 4 kW, 3-Phase, SiC Motor Drive Module,", IEEE Power Electronics Specialist Conference (PESC), 2007.
- (2007) IEEE Power Electronics Specialist Conference (PESC)
- Hornbger, J.M.¹ Cilio, E.² McPherson, B.³ Schupbach, R.M.⁴ Lostetter, A.B.⁵ Mantooth, H.A.⁶

4
- 0030691417
- Silicon carbide for power devices
- J.W. Palmour, R. Singh, R.C. Glass, O. Kordina, C.H. Carter, Jr, "Silicon Carbide for Power Devices,", IEEE Symposium on Power Semiconductor Devices and ICs, 1997.
- (1997) IEEE Symposium on Power Semiconductor Devices and ICs
- Palmour, J.W.¹ Singh, R.² Glass, R.C.³ Kordina, O.⁴ Carter Jr., C.H.⁵

5
- 84876914262
- High temperature SiC wireless telemetry systems
- J.R. Fraley, B. Western, R.M. Schupbach, A.B. Lostetter, B. McPherson, J. Hornberger, J. Yang, "High Temperature SiC Wireless Telemetry Systems,", IEEE High Temperature Electronics Network (HiTEN) 2009
- (2009) IEEE High Temperature Electronics Network (HiTEN)
- Fraley, J.R.¹ Western, B.² Schupbach, R.M.³ Lostetter, A.B.⁴ McPherson, B.⁵ Hornberger, J.⁶ Yang, J.⁷

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