Thermal stability of silicon carbide power diodes

IEEE Transactions on Electron Devices

Volumn 59, Issue 3, 2012, Pages 761-769

  Buttay, Cyril ^a   Raynaud, Christophe ^a,b   Morel, Hervé ^a   Civrac, Gabriel ^a,b   Locatelli, Marie Laure ^c   Morel, Florent ^d  

^a Univ Claude Bernard Lyon1   (France)

^b UNIVERSITÉ DE LYON   (France)

^c d'Hydraulique et des Telecommunications   (France)

^d ECOLE CENTRALE DE LYON   (France)

Author keywords

High temperature techniques; p i n diodes; power electronics; Schottky diodes; silicon carbide (SiC)

Indexed keywords

EXPERIMENTAL MEASUREMENTS; HIGH TEMPERATURE; HIGHER JUNCTION TEMPERATURES; MERGED P-I-N SCHOTTKY; PIN DIODE; POWER DEVICES; POWER DIODE; SCHOTTKY DIODES; SIC DEVICES; SIC DIODES; THERMAL RUNAWAYS; UNIPOLAR DIODES;

DIODES; POWER ELECTRONICS; SCHOTTKY BARRIER DIODES;

SILICON CARBIDE;

EID: 84857640854     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2011.2181390     Document Type: Article

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