Characterization of SiC JFET for temperature dependent device modeling

PESC Record - IEEE Annual Power Electronics Specialists Conference

Volumn , Issue , 2006, Pages

  Funaki, T ^a   Kashyap, A S ^b   Mantooth, H A ^b   Balda, J C ^b   Barlow, F D ^b   Kimoto, T ^a   Hikihara, T ^a  

^a KYOTO UNIVERSITY   (Japan)

^b University of Arkansas   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CIRCUIT SIMULATION; ENERGY GAP; SEMICONDUCTOR MATERIALS; SILICON CARBIDE; SWITCHING CIRCUITS;

CIRCUIT SIMULATION MODELS; IMPEDANCE ANALYZER; POWER SWITCHING DEVICES; TEMPERATURE DEPENDENT DEVICES;

JUNCTION GATE FIELD EFFECT TRANSISTORS;

EID: 42449100348     PISSN: 02759306     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PESC.2006.1712168     Document Type: Conference Paper

References (35)

1. J. L. Hudgins, G. S. Simin, E. Santi, M. A. Khan, "An Assessment of Wide Bandgap Semiconductors for Power Devices", IEEE Trans. on Power Electronics (PE), Vol. 18, No. 3, 2003, pp. 907-914.
2. M. Lados, "Modeling and Simulation of Wide Bandgap Semiconductor Devices: 4H/6H-SiC", Selected Topics of Electronics and Micromechatronics, Vol. 3, Shaker Verlag, Aachen 2002.
3. J. C. Zolper and M. Skowronski, "Advances in Silicon Carbide Electronics ", MRS Bulletin, Vol. 30, pp.273-279, 2005.
4. J.L.Hudgins, G.S.Simin, E.Santi, and M.A.Khan, "An Assessment of Wide Bandgap Semiconductors for Power Devices", IEEE Trans. on PE, Vol.18, No.3, pp.907-914, 2003.
5. C.E.Weitzel, J.W.Palmour, C.H.Carter, K.Moorc, K.K.Nordquist, S.Allen, C.Thero, and M.Bhatnagar, "Silicon carbide high-power devices," IEEE Trans. ED, Vol.43, No.10, pp.1732-1741, 1996.
6. A. R. Hefner, R. Singh, J. Lai, D. Berning, S. Bouche, C. Chapuy, "SiC Power Diodes Provide Breakthrough Performance for a Wide Range of Applications", IEEE Trans. PE, Vol. 16, No. 2, 2001, pp. 273-280.
7. G. Spiazzi, S. Buso, M. Citron, M. Corradin, R. Piorobeon, "Performance Evaluation of a Schottky SiC Power Diode in a Boost PFC Application", IEEE Trans. Power Electronics, Vol. 18, No. 6, 2003, pp. 1249-1253.
8. T. McNutt, A. R. Heftier, A. Mantooth, J. Duliere, D. Berning, and R. Singh, "Silicon Carbide PiN and Merged PiN Schottky Power Diodes Models Implemented in the Saber Circuit Simulator ", Proc. IEEE PESC '01, pp. 2103-2108.
9. A. Elasser, et al., "A comparative evaluation of new silicon carbide diodes and state-of-the-art silicon diodes for power electronic applications", IEEE Transactions on Industry Applications, Vol.39, No.4, pp.915-921, 2003.
10. S. Ha, and J.P. Bergman, "Degradation of SiC High-Voltage pin Diodes", MRS Bulletin, Vol. 30, pp.305-307, 2005.
11. A. Elasser, et al., "A comparative evaluation of new silicon carbide diodes and state-of-the-art silicon diodes for power electronic applications", IEEE Trans. IA, Vol. 39, No. 4, pp.915-921, 2003
12. A. Itoh, T. Kimoto, and H. Matsunami, "High performance of high-voltage 4H-SiC Schottky barrier diodes", IEEE Trans. on ED., Vol.16, No.6, pp.280-282, 1995
13. For example, "SIDC02D60SIC2" from Infineon Technogogies AG., and "CPWR-0600S004" from Cree Inc.
14. M. S. Chinthavali, B. Ozpineci, and L. M. Tolbert: "High Temperature Characterization of SiC Power Electronic Devices", Proc. IEEE WPET2004, Sheraton Detroit Novi, Oct. 21-22, 2004
15. G.Spiazzi, S.Buso, M.Citron, M.Corradin, R.Pierobeon, "Performance Evaluation of a Schottky SiC Power Diode in a Boost PFC Application," IEEE Trans. PELS, Vol.18, No.6, pp.1249-1253, 2003.
16. H.R.Chang, ct al., "1500 V and 10 A SiC motor drive inverter module", Proc. ISPSD '04. 24-27 May 2004 , pp.351-354.
17. F.Schafmeister, S.Herold, and J.W.Kolar, "Evaluation of 1200 V-Si-IGBTs and 1300 V-SiC-JFETs for application in three-phase very sparse matrix AC-AC converter systems", Proc. APEC '03, Vol.1, pp.241-255, 9-13 Feb. 2003.
18. Abou-Alfotouh A.M., et al., "A 1 MHz hard-switched silicon carbide DC/DC converter", Proceedings of the IEEE APEC '03, Vol.1, pp. 132-13 8, 9-13 Feb. 2003.
19. B.Ray, et al., "High temperature operation of a dc-dc power converter utilizing SiC power devices", Proceedings of the IEEE APEC'05, Vol.1, pp.315-321, 6-10 March 2005.
20. B. Ray, R. L.Spyker, "High Temperature Design and Testing of a DC-DC Power Converter with Si and SiC Devices", Proceedings of the 39th IEEE IAS Annual Meeting, 33p5, Seattle, October 3-7, 2004.
21. C.W. Hatfield, G.L. Bilbro, S.T. Allen, and J.W. Palmour, "DC I-V characteristics and RF performance of a 4H-SiC JFET at 773 K", IEEE Trans. on ED, Vol. 45, No.9, pp.2072-2074, 1998
22. R. Sei-Hyung, S. Krishnaswami, M. O'Loughlin, J. Richmond, A. Agarwal, J. Palmour, and A. R. Heftier, "10-kV, 123-mW cm2 4H-SiC power DMOSFETs", IEEE Trans. on EDL, Vol.25, No.8, pp.556-558, 2004
23. K. Fujikawa, K. Shibata, T. Masuda, S. Shikata, H. Hayashi, "800V 4H-SiC RESURF-type lateral JFETs", IEEE Trans. on EDL, Vol.25, No.12, pp.790-791, 2004
24. S. Dhar, S. Wang, J. R. Williams, S. T. Pantelides, and L. C. Feldman, "Interface Passivation for Silicon Dioxide Layers on Silicon Carbide", MRS Bulletin, Vol. 30, pp.288-292, 2005.
25. T. P. Chow, "SiC Biploar Power Devices", MRS Bulletin, Vol. 30, pp.299-303, 2005.
26. S. Sriram, A. Ward, J. Henning, and S. T. Allen, "SiC MESFETs for High-Frequency Applications", MRS Bulletin, Vol. 30, pp.308-311, 2005.
27. J. H. Zaho, "Silicon Carbide Power Field-Effect Transistors", MRS Bulletin, Vol. 30, pp.293-299, 2005.
28. P. Friedrchs, et al., "Static and Dynamic Characteristics of 4H-SiC JFETs Designed for Different Blocking Categories", Materials Science Forum, Vol. 338-342 (2000), pp. 1243-1246.
29. P. Friedrchs, H. Mitlehner, R. Schorner, K. O. Dohnke, R. Elpelt, D. Stephani, "Application-Oriented Unipolar Switching SiC Devices", Materials Science Forum, Vol. 389-393 (2002), pp. 1185-1190.
30. P. Friedrichs, H. Mitlehner, R. Schorner, K-O. Dohnke, R. Elpelt, D. Stephani, "Stacked high voltage switch based on SiC VJFETs", Proc. IEEE ISPSD '03. pp.139-142, Apr. 2003.
31. T.Funaki, et. al, "SiC JFET de characteristics under extremely high ambient temperatures", IEICE Electron. Express, Vol. 1, No. 17, pp.523-527, 2004.
32. T.Funaki, et al., "Switching characteristics of SiC JFET and Schottky diode in high-temperature dc-dc power converters", IEICE Electron. Express, Vol. 2, No. 3, pp.97-102, 2005.
33. T.Funaki, et al., "Power Conversion with SiC Devices at Extremely High Ambient Temperatures", Proc. IEEE PESC'05, June 12-16, 2005.
34. PSPICE A/D Reference Guide Ver. 10.0, Cadence Design Systems, 2002
35. Wong and J. J. Liou, "JFET Circuit Simulation Using SPICE Implemented with an Improved Model", IEEE Trans. on. CAD of ICS, Vol. 13, No. 1, pp. 105-109, 1994.