Evaluation of a SiC power module using low-on-resistance IEMOSFET and JBS for high power density power converters

Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC

Volumn , Issue , 2010, Pages 2030-2035

  Takao, Kazuto ^a   Shinohe, Takashi ^a   Harada, Shinsuke ^b   Fukuda, Kenji ^b   Ohashi, Hiromishi ^b  

^a TOSHIBA CORPORATION   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DESIGN PARAMETERS; HIGH POWER DENSITY; JUNCTION BARRIER; JUNCTION TEMPERATURES; MOS-FET; ON-RESISTANCE; POWER DEVICES; POWER LOSS REDUCTION; POWER MODULE; POWER-LOSSES; SCHOTTKY DIODES;

ELECTRIC EQUIPMENT; POWER CONVERTERS; POWER ELECTRONICS; SCHOTTKY BARRIER DIODES; SILICON CARBIDE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 77952210917     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/APEC.2010.5433514     Document Type: Conference Paper

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