Comparison of switching and conducting performance of SiC-JFET and SiC-BJT with a state of the art IGBT

2009 13th European Conference on Power Electronics and Applications, EPE '09

Volumn , Issue , 2009, Pages

  Franke, W Toke ^a   Fuchs, Friedrich W ^a  

^a UNIVERSITY OF KIEL   (Germany)

Author keywords

Bipolar device; IGBT; JFET; Power semiconductor device; SiC device; Silicon carbide

Indexed keywords

BIPOLAR DEVICE; CONDUCTING PERFORMANCE; DRIVING CIRCUITS; JFET; JUNCTION TEMPERATURES; POWER SEMICONDUCTOR DEVICES; POWER SEMICONDUCTORS; POWER-LOSSES; SIC-DEVICE; STATE OF THE ART; SWITCHING TIME; TEMPERATURE RANGE; TOTAL LOSS;

ACTIVE FILTERS; INSULATED GATE BIPOLAR TRANSISTORS (IGBT); PHOTOLITHOGRAPHY; POWER ELECTRONICS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR SWITCHES; SILICON CARBIDE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 72949087998     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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