High-temperature high-power operation of a 100 A SiC DMOSFET module

Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC

Volumn , Issue , 2009, Pages 653-657

  Salem, T E ^a   Urciuoli, D P ^b   Green, R ^b   Ovrebo, G K ^b  

^a UNITED STATES NAVAL ACADEMY   (United States)

^b U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMMERCIAL MARKETPLACE; DC-DC BOOST CONVERTERS; DMOSFET; HIGH BREAKDOWN VOLTAGE; HIGH OPERATING TEMPERATURE; HIGH TEMPERATURE; HIGH-CURRENT; HIGH-POWER OPERATION; HIGH-TEMPERATURE POWER; HYBRID ELECTRIC VEHICLE; JUNCTION BARRIER SCHOTTKY; LIQUID COOLANT; LOW LOSS; MATERIAL PROCESSING; MOSFETS; NEW HIGH; POWER ELECTRONIC DEVICES;

AUTOMOBILE ELECTRONIC EQUIPMENT; ELECTRIC AUTOMOBILES; ELECTRIC CONDUCTIVITY; HETEROJUNCTION BIPOLAR TRANSISTORS; HYBRID SYSTEMS; INDUSTRIAL RESEARCH; IONIZATION OF GASES; POWER ELECTRONICS; PROPULSION; SILICON CARBIDE; STRUCTURAL OPTIMIZATION;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 65949090752     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/APEC.2009.4802729     Document Type: Conference Paper

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