Traction inverter that applies hybrid module using 3-kV SiC-SBDs

2010 International Power Electronics Conference - ECCE Asia -, IPEC 2010

Volumn , Issue , 2010, Pages 3266-3270

  Ishikawa, Katsumi ^a   Ogawa, Kazutoshi ^a   Onose, Hidekatsu ^a   Kameshiro, Norifumi ^a   Nagasu, Masahiro ^a  

^a HITACHI LTD   (Japan)

Author keywords

High speed drive; Inverter loss; JBS structure; Schottky barrier diodes; SiC; SiC hybrid module

Indexed keywords

HIGH SPEED DRIVES; HYBRID MODULES; INVERTER LOSS; JBS STRUCTURE; SIC;

CURRENT VOLTAGE CHARACTERISTICS; DIODES; ENERGY DISSIPATION; INDUCTION MOTORS; POWER ELECTRONICS; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE; SPEED;

SCHOTTKY BARRIER DIODES;

EID: 77956547716     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IPEC.2010.5543704     Document Type: Conference Paper

References (3)

1. P. Brosselard, et al., "High temperature behavior of 3.5 kV 4H-SiC JBS diode", Proc. of ISPSD2007, p. 285
2. B. A. Hull, et al., "Performance and stability of large-area 4H-SiC 10-kV junction barrier Schottky rectifiers", IEEE Trans. Electron Devices, vol. 55, no. 8, p. 1864
3. M. Nagasu, et al., Proc. PCIM INTER · 8 Japan Proc, (1998) p. 175