Thermochemical resistive switching: Materials, mechanisms, and scaling projections

Phase Transitions

Volumn 84, Issue 7, 2011, Pages 570-602

  Ielmini, Daniele ^a   Bruchhaus, Rainer ^b   Waser, Rainer ^b,c  

^a POLITECNICO DI MILANO   (Italy)

^b Section JARA FIT   (Germany)

^c RWTH AACHEN UNIVERSITY   (Germany)

Author keywords

memory device scaling; resistive switching; thermochemical switching mechanism

Indexed keywords

CONDUCTIVE FILAMENTS; ELECTROCHEMICAL PROCESS; LONG TERM STABILITY; MEMORY DEVICE; MEMORY SWITCHING; MEMORY TECHNOLOGY; MODEL MATERIALS; OXYGEN DEFICIENT; REDOX PROCESS; RESET CURRENTS; RESISTANCE STATE; RESISTIVE STATE; RESISTIVE SWITCHING; SET OPERATION; SOLID-STATE PROCESS; SWITCHING PROCESS; THERMALLY ACTIVATED; THERMOCHEMICAL SWITCHING MECHANISM; THRESHOLD SWITCHING; UNIPOLAR SWITCHING; VOLTAGE POLARITY;

ELECTROFORMING; OXYGEN; PLATINUM; REDOX REACTIONS; SWITCHING SYSTEMS;

SWITCHING;

EID: 79960709994     PISSN: 01411594     EISSN: 10290338     Source Type: Journal    
DOI: 10.1080/01411594.2011.561478     Document Type: Article

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