Investigating the switching dynamics and multilevel capability of bipolar metal oxide resistive switching memory

Applied Physics Letters

Volumn 98, Issue 10, 2011, Pages

  Yu, Shimeng ^a   Wu, Yi ^a   Wong, H S Philip ^a  

^a Stanford University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BI-LAYER; HIGH-RESISTANCE STATE; METAL OXIDES; MIGRATION MODEL; OXYGEN IONS; PROGRAMMING PULSE; RESISTIVE SWITCHING; RESISTIVE SWITCHING MEMORIES; SWITCHING DYNAMICS; TARGET RESISTANCE; TRANSIENT CURRENT;

HAFNIUM COMPOUNDS; METALLIC COMPOUNDS; OXYGEN; POWER QUALITY; PULSE AMPLITUDE MODULATION; SWITCHING SYSTEMS;

SWITCHING;

EID: 79952640478     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3564883     Document Type: Article

References (19)

1. H. Akinaga and H. Shima, Proc. IEEE 0018-9219 98, 2237 (2010). 10.1109/JPROC.2010.2070830
2. R. Waser, R. Dittmann, G. Staikov, and K. Szot, Adv. Mater. (Weinheim, Ger.) 0935-9648 21, 2632 (2009). 10.1002/adma.200900375
3. N. Xu, L. F. Liu, X. Sun, X. Y. Liu, D. D. Han, Y. Wang, R. Q. Han, J. F. Kang, and B. Yu, Appl. Phys. Lett. 0003-6951 92, 232112 (2008). 10.1063/1.2945278
4. U. Russo, D. Ielmini, C. Cagli, and A. L. Lacaita, IEEE Trans. Electron Devices 0018-9383 56, 193 (2009). 10.1109/TED.2008.2010584
5. S. Yu and H. -S. P. Wong, IEEE Electron Device Lett. 0741-3106 31, 1455 (2010). 10.1109/LED.2010.2078794
6. C. Schindler, G. Staikov, and R. Waser, Appl. Phys. Lett. 0003-6951 94, 072109 (2009). 10.1063/1.3077310
7. Y. S. Chen, H. Y. Lee, P. S. Chen, P. Y. Gu, C. W. Chen, W. P. Lin, W. H. Liu, Y. Y. Hsu, S. S. Sheu, P. C. Chiang, W. S. Chen, F. T. Chen, C. H. Lien, and M. -J. Tsai, Tech. Dig.-Int. Electron Devices Meet. 0163-1918 2009, 105.
8. H. Y. Lee, Y. S. Chen, P. S. Chen, P. Y. Gu, Y. Y. Hsu, S. M. Wang, W. H. Liu, C. H. Tsai, S. S. Sheu, P. C. Chiang, W. P. Lin, C. H. Lin, W. S. Chen, F. T. Chen, C. H. Lien, and M. -J. Tsai, Tech. Dig.-Int. Electron Devices Meet. 0163-1918 2010, 460.
9. Y. Wu, B. Lee, and H. -S. P. Wong, IEEE Electron Device Lett. 0741-3106 31, 1449 (2010). 10.1109/LED.2010.2074177
10. S. Yu, B. Gao, H. B. Dai, B. Sun, L. F. Liu, X. Y. Liu, R. Q. Han, J. F. Kang, and B. Yu, Electrochem. Solid-State Lett. 1099-0062 13, H36 (2010). 10.1149/1.3267050
11. S. Yu, Y. Wu, Y. Chai, J. Provine, and H. -S. P. Wong, Symposium on VLSI Technology Systems and Applications (VLSI-TSA) (IEEE, New York, 2011).
12. L. Goux, Y. -Y. Chen, L. Pantisano, X. -P. Wang, G. Groeseneken, M. Jurczak, and D. J. Wouters, Electrochem. Solid-State Lett. 1099-0062 13, G54 (2010). 10.1149/1.3373529
13. S. Blonkowski, J. Appl. Phys. 0021-8979 107, 084109 (2010). 10.1063/1.3386517
14. B. Gao, S. Yu, N. Xu, L. F. Liu, B. Sun, X. Y. Liu, R. Q. Han, J. F. Kang, B. Yu, and Y. Y. Wang, Tech. Dig.-Int. Electron Devices Meet. 0163-1918 2008, 536.
15. T. Tsuruoka, K. Terabe, T. Hasegawa, and M. Aono, Nanotechnology 0957-4484 21, 425205 (2010). 10.1088/0957-4484/21/42/425205
16. N. F. Mott and R. W. Gurney, Electronic Processes in Ionic Crystals (Clarendon, Oxford, 1948).
17. B. Gao, J. F. Kang, H. W. Zhang, B. Sun, B. Chen, L. F. Liu, X. Y. Liu, R. Q. Han, Y. Y. Wang, Z. Fang, H. Y. Yu, and D. -L. Kwong, Proceedings of European Solid-State Device Research Conference (IEEE, New York, 2010), p. 392.
18. P. Gonon, M. Mougenot, C. Valĺe, C. Jorel, V. Jousseaume, H. Grampeix, and F. E. Kamel, J. Appl. Phys. 0021-8979 107, 074507 (2010). 10.1063/1.3357283
19. S. Yu and H. -S. P. Wong, Tech. Dig.-Int. Electron Devices Meet. 0163-1918 2010, 520.