Filamentary-switching model in RRAM for time, energy and scaling projections

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2011, Pages

  Ielmini, Daniele ^a  

^a POLITECNICO DI MILANO   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

BIT SIZE; CONDUCTIVE FILAMENTS; PHYSICAL MODELING; RESISTIVE SWITCHING MEMORIES; SWITCHING TIME; VOLTAGE-CONTROLLED;

ELECTRON DEVICES; MODELS; SWITCHING;

RANDOM ACCESS STORAGE;

EID: 84857013128     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2011.6131571     Document Type: Conference Paper

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