ResetSet instability in unipolar resistive-switching memory

IEEE Electron Device Letters

Volumn 31, Issue 6, 2010, Pages 552-554

  Ielmini, Daniele ^a,b  

^a POLITECNICO DI MILANO   (Italy)

^b IUNET   (Italy)

Author keywords

Nonvolatile memory; Resistive switching memory (RRAM); Transition metal oxides

Indexed keywords

CELL STATE; FUTURE TECHNOLOGIES; HIGH-DENSITY; HIGH-TO-LOW; LOW VOLTAGES; NON-VOLATILE MEMORIES; RESET PULSE; RESISTIVE SWITCHING MEMORIES; SET OPERATION; TRANSITION-METAL OXIDES;

PHASE CHANGING CIRCUITS; STRUCTURED PROGRAMMING; TRANSITION METAL COMPOUNDS; TRANSITION METALS;

SWITCHING;

EID: 77953026233     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2045471     Document Type: Article

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