An Access-Transistor-Free (0T/1R) Non-Volatile Resistance Random Access Memory (RRAM) Using a Novel Threshold Switching, Self-Rectifying Chalcogenide Device

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2003, Pages 905-908

  Chen, Yi Chou ^a   Chen, C F ^a   Chen, C T ^a   Yu, J Y ^a   Wu, S ^a   Lung, S L ^a   Liu, Rich ^a   Lu, Chih Yuan ^a  

^a MACRONIX INTERNATIONAL CO LTD   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; ARRAYS; CMOS INTEGRATED CIRCUITS; ELECTRIC RESISTANCE MEASUREMENT; LOGIC PROGRAMMING; NONVOLATILE STORAGE; SOLID STATE RECTIFIERS; SWITCHING CIRCUITS; THRESHOLD VOLTAGE; TRANSISTORS; TRANSMISSION ELECTRON MICROSCOPY;

BIASING VOLTAGES; CHALCOGENIDES; CHIP PROGRAMMING; MEMORY CELLS; RESISTANCE RANDOM ACCESS MEMORY (RRAM);

RANDOM ACCESS STORAGE;

EID: 0842266493     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. S. Lai et al., IEDM 2001 Technical Digest, pp. 803-806, 2001.
2. Y. C. Chen et al., Proc. of 2003 CICC 16-4, 2003, in press.
3. M. Gill et al., ISSCC Dig. of Tech Papers, pp. 202-459, 2002.
4. A. Pirovano et al., IEDM 2002 Tech. Digest, pp. 923-926, 2002.