Pulse-programming instabilities of unipolar-type niox

IEEE Electron Device Letters

Volumn 31, Issue 6, 2010, Pages 600-602

  Kim, Deok Kee ^a   Suh, Dong Seok ^a   Park, Jucheol ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

NiOx; Pulse programming; Resistive random access memory (ReRAM)

Indexed keywords

APPLIED VOLTAGES; FEEDBACK CIRCUITS; MEMORY SWITCHING; PARASITIC CAPACITANCE; RESET PULSE; RESISTIVE RANDOM ACCESS MEMORY; RESISTIVE SWITCHING MEMORIES; THRESHOLD SWITCHING; TRANSIENT CURRENT;

CIRCUIT OSCILLATIONS; NONVOLATILE STORAGE; SWITCHING;

RANDOM ACCESS STORAGE;

EID: 77953028392     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2045873     Document Type: Article

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