ALD grown zinc oxide with controllable electrical properties

Semiconductor Science and Technology

Volumn 27, Issue 7, 2012, Pages

  Guziewicz, E ^a   Godlewski, M ^a,b   Wachnicki, L ^a   Krajewski, T A ^a   Luka, G ^a   Gieraltowska, S ^a   Jakiela, R ^a   Stonert, A ^c   Lisowski, W ^d   Krawczyk, M ^d   Sobczak, J W ^d   Jablonski, A ^d  

^a INSTITUTE OF PHYSICS   (Poland)

^b CARDINAL STEFAN WYSZY SKI UNIVERSITY   (Poland)

^c SOLTAN INSTITUTE FOR NUCLEAR STUDIES   (Poland)

^d INSTITUTE OF PHYSICAL CHEMISTRY   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

3D MEMORY; ELECTRICAL PARAMETER; FREE CARRIER CONCENTRATION; LOW-TEMPERATURE DEPOSITION; LOW-TEMPERATURE REGIME; ORGANIC SUBSTRATE; RECTIFICATION RATIO; SCHOTTKY JUNCTIONS; ZNO FILMS; ZNO LAYERS;

ATOMIC LAYER DEPOSITION; ELECTRON MOBILITY; OXIDE FILMS; TEMPERATURE; ZINC OXIDE;

ELECTRIC PROPERTIES;

EID: 84862751115     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/27/7/074011     Document Type: Article

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