Atomic layer deposition grown composite dielectric oxides and ZnO for transparent electronic applications

Thin Solid Films

Volumn 520, Issue 14, 2012, Pages 4694-4697

  Gieraltowska, S ^a   Wachnicki, L ^a   Witkowski, B S ^a   Godlewski, M ^a,b   Guziewicz, E ^a  

^a INSTITUTE OF PHYSICS   (Poland)

^b CARDINAL STEFAN WYSZY SKI UNIVERSITY   (Poland)

Author keywords

Atomic layer deposition; High k dielectric oxide; Transparent thin film transistor; Zinc oxide

Indexed keywords

ALD GROWTH; ALUMINUM OXIDES; COMPOSITE DIELECTRICS; COMPOSITE LAYER; GATE LAYERS; GROWTH PARAMETERS; HAFNIUM DIOXIDE; HIGH-K DIELECTRIC OXIDES; LAMINAR STRUCTURE; LOW TEMPERATURES; MONOLAYER GROWTH; SURFACE FLATNESS; TECHNOLOGICAL PARAMETERS; THICK LAYERS; TRANSISTOR STRUCTURE; TRANSPARENT ELECTRONICS; TRANSPARENT THIN FILM TRANSISTOR; ZINC OXIDE (ZNO); ZNO;

ALUMINUM; HAFNIUM OXIDES; MONOLAYERS; NANOCOMPOSITE FILMS; OPTIMIZATION; THIN FILM TRANSISTORS; ZINC OXIDE;

ATOMIC LAYER DEPOSITION;

EID: 84860273262     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2011.10.151     Document Type: Conference Paper

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