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Volumn 98, Issue 26, 2011, Pages

Hafnium dioxide as a passivating layer and diffusive barrier in ZnO/Ag Schottky junctions obtained by atomic layer deposition

(12) Krajewski, Tomasz A a Luka, Grzegorz a Gieraltowska, Sylwia a Zakrzewski, Adam J a,b Smertenko, Petro S c Kruszewski, Piotr a,d Wachnicki, Lukasz a Witkowski, Bartlomiej S a Lusakowska, Elzbieta a Jakiela, Rafal a Godlewski, Marek a,b Guziewicz, Elzbieta a

a INSTITUTE OF PHYSICS (Poland)

b CARDINAL STEFAN WYSZY SKI UNIVERSITY (Poland)

c INSTITUTE OF SEMICONDUCTOR PHYSICS (Ukraine)

d CNRS (France)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER; HAFNIUM DIOXIDE; LOW TEMPERATURES; PASSIVATING LAYER; RECTIFICATION RATIO; SCHOTTKY CONTACTS; SCHOTTKY JUNCTIONS; ZNO; ZNO LAYERS; ZNO SURFACE; ZNO THIN FILM;

ATOMIC LAYER DEPOSITION; HAFNIUM; PASSIVATION; ZINC OXIDE;

HAFNIUM OXIDES;

EID: 79960076816 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3604796 Document Type: Article

Times cited : (24)

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