Optical and electrical characterization of defects in zinc oxide thin films grown by atomic layer deposition

Optica Applicata

Volumn 39, Issue 4, 2009, Pages 865-874

  Krajewski, Tomasz A ^a   Łuka, Grzegorz ^a   Wachnicki, Łukasz ^a   Jakieła, Rafał ^a   Witkowski, Bartłomiej ^b   Guziewicz, Elzbieta ^a   Godlewski, Marek ^a,b   Huby, Nolwenn ^c   Tallarida, Grazia ^c  

^a INSTITUTE OF PHYSICS   (Poland)

^b CARDINAL STEFAN WYSZY SKI UNIVERSITY   (Poland)

^c LABORATORIO MDM   (Italy)

Author keywords

Atomic layer deposition (ALD); Electrical properties; Photoluminescence; Zinc oxide

Indexed keywords

AS-GROWN; DEEP DEFECTS; DIETHYLZINC; ELECTRICAL PROPERTIES; ELECTRICAL PROPERTY; GLASS SUBSTRATES; HALL EFFECT MEASUREMENT; LOW TEMPERATURES; LOWER ENERGIES; LUMINESCENCE BAND; N2 ATMOSPHERES; OPTICAL AND ELECTRICAL CHARACTERIZATION; OPTICAL CHARACTERISTICS; ORDERS OF MAGNITUDE; RED-LIGHT EMISSION; RICH CONDITIONS; ROOM-TEMPERATURE PHOTOLUMINESCENCE; SECONDARY ION MASS SPECTROSCOPY; SUBSTANTIAL REDUCTION; ZINC OXIDE THIN FILMS; ZNO FILMS; ZNO LAYERS; ZNO THIN FILM;

ANNEALING; ATOMIC LAYER DEPOSITION; ATOMS; CARRIER CONCENTRATION; DEFECTS; DEIONIZED WATER; DEPOSITION; HALL EFFECT; LIGHT; LIGHT EMISSION; MAGNETIC FIELD EFFECTS; METALLIC FILMS; OXIDE FILMS; PHOTOLUMINESCENCE; POINT DEFECTS; SECONDARY ION MASS SPECTROMETRY; THIN FILMS; ZINC; ZINC OXIDE;

ELECTRIC PROPERTIES;

EID: 77449112798     PISSN: 00785466     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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