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Journal of Vacuum Science and Technology B

Volumn 28, Issue 6, 2010, Pages 1173-1178

Thin film transistors with a ZnO channel and gate dielectric layers of HfO2 by atomic layer deposition

(3) Grundbacher, Ronald a Chikkadi, Kiran a Hierold, Christofer a

a ETH ZURICH (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITION; CARRIER CONCENTRATION; GATE DIELECTRICS; HAFNIUM OXIDES; II-VI SEMICONDUCTORS; THIN FILM CIRCUITS; THIN FILMS; THRESHOLD VOLTAGE; ZINC OXIDE;

ATOMIC-LAYER DEPOSITION; C. THIN FILM TRANSISTOR (TFT); CHANNEL LAYERS; DEPOSITION SYSTEMS; ENHANCEMENT-MODE DEVICES; GATE DIELECTRIC LAYERS; N-TYPE ZINC OXIDES; OXIDE DEPOSITION; OXIDE LAYER; SUB NANOMETERS;

THIN FILM TRANSISTORS;

EID: 78650099683 PISSN: 21662746 EISSN: 21662754 Source Type: Journal
DOI: 10.1116/1.3501338 Document Type: Article

Times cited : (12)

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