Characterization of (ZnO)1-x(AlN)x/ZnO junction for optoelectronic applications

Current Applied Physics

Volumn 11, Issue 3, 2011, Pages 834-837

  Gopalakrishnan, N ^a   Balakrishnan, L ^a   Senthamizh Pavai, V ^a   Elanchezhiyan, J ^b   Balasubramanian, T ^a  

^a NATIONAL INSTITUTE OF TECHNOLOGY   (India)

^b Dong Eui University   (South Korea)

Author keywords

Homojunction; Junction parameters; RF sputtering; ZnO

Indexed keywords

ALN; BARRIER HEIGHTS; CO-DOPED; CO-DOPED ZNO; CODOPING METHOD; HOMOJUNCTION; IDEALITY FACTORS; JUNCTION PARAMETERS; OPTOELECTRONIC APPLICATIONS; P-N JUNCTION; RECTIFICATION BEHAVIOR; RF-MAGNETRON SPUTTERING; RF-SPUTTERING; SERIES RESISTANCES; ZNO;

CURRENT VOLTAGE CHARACTERISTICS; DOPING (ADDITIVES); ELECTRIC RECTIFIERS; MAGNETRON SPUTTERING; SEMICONDUCTOR JUNCTIONS;

ZINC OXIDE;

EID: 79951683058     PISSN: 15671739     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cap.2010.12.003     Document Type: Article

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