Nano-Floating Gate Memory Devices Composed of ZnO Thin-Film Transistors on Flexible Plastics

Nanoscale Research Letters

Volumn 6, Issue 1, 2011, Pages 1-4

  Park, Byoungjun ^a   Cho, Kyoungah ^a   Kim, Sungsu ^a   Kim, Sangsig ^a  

^a Korea University   (South Korea)

Author keywords

Flexible devices; Low temperature; Nanoparticles; Non volatile memory; Thin film transistors

Indexed keywords

DIGITAL STORAGE; FLEXIBLE ELECTRONICS; II-VI SEMICONDUCTORS; NANOPARTICLES; SUBSTRATES; TEMPERATURE; THIN FILM TRANSISTORS; THIN FILMS; THRESHOLD VOLTAGE; ZINC OXIDE; ELECTRON MOBILITY; FABRICATION;

FLEXIBLE DEVICE; FLEXIBLE PLASTIC SUBSTRATES; INTEGRATED ELECTRONICS; LOW TEMPERATURES; LOW-TEMPERATURE FABRICATION; MEMORY PROPERTIES; NANOFLOATING GATE MEMORY; NON-VOLATILE MEMORY; AL-NANOPARTICLES; FLEXIBLE PLASTICS; GATE OXIDE; ON/OFF RATIO; POTENTIAL APPLICATIONS; ZNO;

THIN FILM CIRCUITS; FLEXIBLE ELECTRONICS;

EID: 79952705179     PISSN: 19317573     EISSN: 1556276X     Source Type: Journal    
DOI: 10.1007/s11671-010-9789-5     Document Type: Article

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