ZnO grown by atomic layer deposition: A material for transparent electronics and organic heterojunctions

Journal of Applied Physics

Volumn 105, Issue 12, 2009, Pages

  Guziewicz, E ^a   Godlewski, M ^a,c   Krajewski, T ^a   Wachnicki, L ^a   Szczepanik, A ^a   Kopalko, K ^a   Wojcik Godowska A ^a   Przezdziecka E ^a   Paszkowicz, W ^a   Lusakowska E ^a   Kruszewski, P ^a   Huby, N ^b   Tallarida, G ^b   Ferrari, S ^b  

^a INSTITUTE OF PHYSICS   (Poland)

^b INFM   (Italy)

^c CARDINAL STEFAN WYSZY SKI UNIVERSITY   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

ANTICORRELATION; ELECTRICAL PARAMETER; ELECTRON CONCENTRATION; ELECTRONIC DEVICE; FREE ELECTRON CONCENTRATION; GROWTH PROCESS; LOW TEMPERATURES; LOW THERMAL BUDGET; LOW-TEMPERATURE DEPOSITION; ORGANIC HETEROJUNCTIONS; PHOTOLUMINESCENCE BANDS; PROCESS PARAMETERS; SELF-COMPENSATION EFFECTS; TRANSPARENT ELECTRONICS; ZINC OXIDE THIN FILMS; ZNO; ZNO THIN FILM;

ATOMS; HETEROJUNCTIONS; OXIDE FILMS; SEMICONDUCTING ZINC COMPOUNDS; THIN FILMS; ZINC; ZINC OXIDE;

DEPOSITION;

EID: 67650251862     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3133803     Document Type: Conference Paper

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