Effects of oxygen concentration on the electrical properties of ZnO films

Ceramics International

Volumn 34, Issue 4, 2008, Pages 1097-1101

  Kim, Hong Seung ^a   Jung, Eun Soo ^a   Lee, Won Jae ^b   Kim, Jin Hyeok ^c   Ryu, Sang Ouk ^d   Choi, Sung Yool ^e  

^a Korea Maritime University   (South Korea)

^b Dong Eui University   (South Korea)

^c Chonnam National University   (South Korea)

^d Dankook University   (South Korea)

^e Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

A. Films; C. Electrical property; D. ZnO; Oxygen content

Indexed keywords

ANNEALING; AUGER ELECTRON SPECTROSCOPY; CARRIER CONCENTRATION; ELECTRIC CONDUCTIVITY; STOICHIOMETRY; ZINC OXIDE;

CRYSTALLINITY; ELECTRON CONCENTRATION; OXYGEN CONCENTRATION; OXYGEN CONTENT;

OXIDE FILMS;

EID: 42649093192     PISSN: 02728842     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ceramint.2007.09.105     Document Type: Article

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