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Volumn 30, Issue 2, 2012, Pages

SiCl 4/Cl 2 plasmas: A new chemistry to etch high-k materials selectively to Si-based materials

Author keywords

[No Author keywords available]

Indexed keywords

CRITICAL STEPS; ETCHING PLASMA; ETCHING PROCESS; GATE TRANSISTORS; HIGH-K MATERIALS; INFINITE SELECTIVITY; METALLIC OXIDES; OTHER APPLICATIONS; PROCESS WINDOW; SI-BASED MATERIALS; SOURCE AND DRAINS; STATE OF THE ART; ULTRATHIN LAYERS; VOLATILE PRODUCTS; WAFER TEMPERATURE; XPS ANALYSIS;

EID: 84858016045     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.3679551     Document Type: Article
Times cited : (8)

References (37)
  • 23
  • 29
    • 85026341102 scopus 로고    scopus 로고
    • Influence of the reactor wall composition on radicals' densities and total pressure in Cl2 inductively coupled plasmas: II. during silicon etching
    • DOI 10.1063/1.2803881
    • G. Cunge, N. Sadeghi, and R. Ramos, J. Appl. Phys. 102, 093305 (2007). 10.1063/1.2803881 (Pubitemid 350128991)
    • (2007) Journal of Applied Physics , vol.102 , Issue.9 , pp. 093305
    • Cunge, G.1    Sadeghi, N.2    Ramos, R.3
  • 34
    • 0011452551 scopus 로고    scopus 로고
    • 10.1063/1.362613
    • V. M. Donnelly, J. Appl. Phys. 79, 9353 (1996). 10.1063/1.362613
    • (1996) J. Appl. Phys. , vol.79 , pp. 9353
    • Donnelly, V.M.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.